Takaya Miyase

Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering

T. Kamiya, K. Nomura, H. Hosono, 2014 .

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor

T. Kamiya, H. Hosono, K. Abe, 2014, IEEE Electron Device Letters.

Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

Hideo Hosono, Katsumi Abe, Toshio Kamiya, 2014, Journal of Display Technology.

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices

K. Wada, H. Doi, Takaya Miyase, 2019, Materials Science Forum.

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

K. Wada, H. Doi, Takaya Miyase, 2020 .