H. Jang

发表

Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Sung‐Min Yoon, Ji-Hee Yang, S. Kwak, 2019, Organic Electronics.

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

Sung‐Min Yoon, Min-Ji Park, Da-Jeong Yun, 2019, Japanese Journal of Applied Physics.

Structural characterization of InGaN thin films and multiple quantum wells: an approach of combining various X-ray scattering methods

D. Noh, K. Liang, Dong-Hyun Kim, 2003 .

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

Hyun Hwi Lee, Y. Moon, D. Noh, 2002 .

Weak-link behavior of grain boundaries in superconducting Ba(Fe1−xCox)2As2 bicrystals

Ho Won Jang, C. M. Folkman, D. Larbalestier, 2009, 0907.3741.

Two stage oxidation in epitaxial Ni(111)/GaN (0001) thin films

D. Noh, H. Kang, Dong-Hyun Kim, 2003 .

Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al2O3 buffer layer

C. Byun, Sung‐Min Yoon, Ji-Hee Yang, 2018, Japanese Journal of Applied Physics.

Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

M. Furuta, Jeong-Won Yoon, Saeroonter Oh, 2021 .

Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates.

Sung‐Min Yoon, H. Jang, Sangkyun Kim, 2019, ACS applied materials & interfaces.

Improvement in Mechanical Durability of Stretchable Charge-Trap Memory Transistors with Engineered Wavy-Dimensional Structures

G. Kim, Sung‐Min Yoon, H. Jang, 2020 .