Ryoko Miyanaga

Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method

Y. Uraoka, Y. Ishikawa, M. Fujii, 2019 .

SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors

Y. Uraoka, Y. Ishikawa, M. Fujii, 2018, Thin Solid Films.

Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content

S. Kamiyama, K. Harafuji, A. Tsujimura, 1999 .

Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors

Y. Uraoka, Y. Ishikawa, M. Fujii, 2020, Applied Physics Express.

Hot carrier effects in InGaZnO thin-film transistor

Y. Uraoka, Y. Ishikawa, K. Takechi, 2019, Applied Physics Express.

Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n− Region Under Negative Bias Stress and Light Irradiation

Y. Uraoka, J. Bermundo, Takanori Takahashi, 2023, IEEE Electron Device Letters.

High reliability InGaZnO TFT by inductively coupled plasma sputtering system

Y. Uraoka, M. Fujii, Y. Andoh, 2019, 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).