D. Fraser

发表

Factors Influencing the Acoustic Properties of Vitreous Silica

D. B. Fraser, D. Fraser, 1968 .

Fundamental Studies of Aging in Quartz Resonators

A. Warner, D.B. Fraser, D. Fraser, 1965, IEEE Transactions on Sonics and Ultrasonics.

Highly Conductive, Transparent Films of Sputtered In2 − x Sn x O 3 − y

D. B. Fraser, H. D. Cook, D. Fraser, 1972 .

Sputter-deposited films for display devices

D. Fraser, 1972 .

II-3 – The Sputter and S-Gun Magnetrons*

D. Fraser, 1978 .

Optical Determinations of OH in Fused Silica

D. Fraser, D. M. Dodd, 1966 .

Thin film interaction between titanium and polycrystalline silicon

S. Murarka, D. Fraser, 1980 .

Acoustic Loss of Vitreous Silica at Elevated Temperatures

D. Fraser, 1970 .

Low Dielectric Constant Films for ULSI Interconnect Applications

D. Fraser, Q. T. Vu, A. Mack, 1995 .

Electron cyclotron resonance (ECR) deposited SiO/sub 2/ films for interlayer dielectric application

D. Fraser, D. Denison, C. Chiang, 1990, Seventh International IEEE Conference on VLSI Multilevel Interconnection.

A new caged structure spin-on-silica for multilevel interconnect application

D. Fraser, R. Pineda, C. Chiang, 1990, Seventh International IEEE Conference on VLSI Multilevel Interconnection.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

T. Marieb, D. Gardner, D. Fraser, 1995 .

Film deposition with the Sputter Gun

H. D. Cook, D. Fraser, 1977 .

Aluminum Oxidation in Water

M. Grieco, T. Sheng, R. Marcus, 1978 .

Correlation of Reduction in Optically Induced Refractive‐Index Inhomogeneity with OH Content in LiTaO3 and LiNbO3

R. Smith, D. Fraser, R. Denton, 1968 .

X-ray Determination and Finite-Element Modeling of Stress in Passivated Al-0.5%Cu Lines During Thermal Cycling.

J. Bravman, P. Besser, D. Fraser, 1993 .

Anomalous behavior of shallow BF3 plasma immersion ion implantation

E. E. Jones, N. Cheung, S. Ogawa, 1994 .

THE COEFFICIENT OF THERMAL EXPANSION OF VARIOUS CUBIC METALS BELOW 100 °K

D. Fraser, A. Hallett, 1965 .

Electromigration Resistance of Fine-Line Al for VLSI Applications

D. B. Fraser, S. Vaidya, A. K. Sinha, 1980, 18th International Reliability Physics Symposium.

Reducing the Temperature of Conventional Silicon Epitaxy for Selective Poly‐Epi Growth

J. Shappir, I. Beinglass, I. Rahat, 1991 .

Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO2

D. B. Fraser, Shyam P. Murarka, S. Murarka, 1980 .

Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects

S. Murarka, H. Levinstein, A. K. Sinha, 1980, IEEE Transactions on Electron Devices.

Oxidation of tantalum disilicide on polycrystalline silicon

W. S. Lindenberger, S. Murarka, A. K. Sinha, 1980 .

Resistivities of Thin Film Transition Metal Silicides

S. Murarka, M. H. Read, D. Fraser, 1982 .

Novel Method of Measuring Elastic and Anelastic Properties of Solids

D. Fraser, R. Lecraw, 1964 .

Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects

A.K. Sinha, S. Murarka, H. Levinstein, 1980, IEEE Journal of Solid-State Circuits.

High temperature stability of PtSi formed by reaction of metal with silicon or by cosputtering

E. J. Lloyd, J. M. Andrews, S. Murarka, 1983 .

Growth of epitaxial CoSi2 on (100)Si

D. Fraser, M. Dass, Chih-Shih Wei, 1991 .

Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions

E. J. Lloyd, S. Murarka, H. Levinstein, 1987, IEEE Transactions on Electron Devices.

Epitaxial CoSi 2 Film Formation on (100) Si by Annealing of Co/Ti/Si Structure in N 2

J. Fair, A. Dass, S. Ogawa, 1993 .

Direct Solid State Phase Transformation from Co to Epitaxial CoSi2 in Co / Thin Ti / (100) Si Structure and its Application for Shallow Junction Formation

E. E. Jones, N. Cheung, J. Fair, 1993 .

Cosputtered molybdenum silicides on thermal SiO2

T. F. Retajczyk, T. T. Sheng, S. Murarka, 1980 .

A Raman spectrophotometric investigation of the phases formed during the cobalt silicidation by rapid thermal anneal

J. N. Cox, D. Fraser, J. J. Murray, 1989 .

MOS Compatibility of High-Conductivity TaSi/sub 2//n+ Poly-Si Gates

W. S. Lindenberger, S. Murarka, A. K. Sinha, 1980, IEEE Journal of Solid-State Circuits.

MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates

W. S. Lindenberger, S. Murarka, A. K. Sinha, 1980, IEEE Transactions on Electron Devices.

The 3000–3900 cm−1 absorption bands and anelasticity in crystalline α-quartz

D. Fraser, D. M. Dodd, 1965 .

Mechanical properties and microstructural characterization of Al-0.5%Cu thin films

Ramnath Venkatraman, Paul A. Flinn, John C. Bravman, 1990 .

Impurities and Anelasticity in Crystalline Quartz

D. Fraser, 1968 .

Diffusion of copper through dielectric films under bias temperature stress

Chien Chiang, David B. Fraser, D. Fraser, 1995 .

A novel technique for in-line monitoring of micro-contamination and process induced damage

A. Wu, D. Fraser, V. Murali, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Anelastic Effects of Alkali Ions in Crystalline Quartz

D. Fraser, 1964 .

Sputtered films for display devices

D. Fraser, 1973 .

Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides

A.T. Wu, J. Nulman, M. Garner, 1989, IEEE Electron Device Letters.

Optimization of Al step coverage through computer simulation and scanning electron microscopy

I. Blech, S. Haszko, D. Fraser, 1978 .

Electromigration in fine‐line sputter‐gun Al

D. B. Fraser, W. S. Lindenberger, S. Vaidya, 1980 .

Abstract: MOS metallization via automatic ’’S‐Gun’’ planetary deposition system

D. Fraser, T. Fogarty, W. J. Valentine, 1978 .

Abstract: High‐rate sputter deposition—circular magnetrons

D. Fraser, 1978 .

Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambient

André Vantomme, David B. Fraser, M. Nicolet, 1993 .

Growth of epitaxial CoSi2 on Si(100) using Si(100)/Ti/Co bilayers

M. Nicolet, A. Vantomme, G. Bai, 1993 .

Lithium Niobate: A High‐Temperature Piezoelectric Transducer Material

A. W. Warner, D. B. Fraser, A. Warner, 1966 .

Hardness and Modulus Studies on Dielectric Thin Films

P. Flinn, G. Neubauer, G. Cuan, 1992 .

PHYSICAL LIMITATIONS ON THE PERFORMANCE OF VITREOUS SILICA IN HIGH‐FREQUENCY ULTRASONIC AND ACOUSTO‐OPTICAL DEVICES

J. T. Krause, A. Meitzler, D. Fraser, 1967 .

Composite Acoustic Delay Medium with a Zero Temperature Coefficient of Delay

D. Fraser, J. Thomson, L. Egerton, 1969 .

In situ x‐ray diffraction study of CoSi2 formation during annealing of a Co/Ti bilayer on Si(100)

J. Fair, T. Roberts, K. Gray, 1995 .

The use of selective silicide plugs for submicron contact fill

D. Fraser, M. Dass, V. Murali, 1989, Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference.

The electrical resistance ratio (RR) as a thin film metal monitor

P. Davies, K. Wu, K. Wu, 1990, 28th Annual Proceedings on Reliability Physics Symposium.

Interaction of metal with underlying dielectric films in multilevel interconnect systems

K. Wu, S. Mittal, D. Fraser, 1989, Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference.

Challenges And Issues Of Low-k Dielectrics

Chien Chiang, David B. Fraser, Anne Sauter Mack, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.