K. Nishi

Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers

H. Saito, S. Sugou, K. Nishi, 2001, Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).

High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bonding

S. Sugou, K. Tokutome, K. Mori, 1994 .

1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy

R. Lang, Kohroh Kobayashi, I. Mito, 1983 .

Effect of stimulated Raman scattering on pulse-compression characteristics.

M. Nakazawa, H. Kubota, T. Nakashima, 1987, Optics Letters.

Improved high-temperature performance of 1.52-μm InGaAsP laser diodes fabricated with two-step vapor-phase and liquid-phase epitaxial growth

R. Lang, I. Mito, M. Yamaguchi, 1985 .

Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities

T. Anan, E. Ippen, H. Yokoyama, 1992 .