J. Manning

发表

The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers

R. Olshansky, Chin B. Su, R. Olshansky, 1983 .

Measurement of carrier and lattice heating in 1.3‐μm InGaAsP light‐emitting diodes

W. Powazinik, R. Olshansky, C. Su, 1983 .

Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm INGaAsP lasers with lightly doped active layers

J. Schlafer, R. Olshansky, C. Su, 1982 .

Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

J. Schlafer, R. Olshansky, C. Su, 1982 .

Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

R. Olshansky, W. Powazinik, Chin B. Su, 1984 .

Temperature dependence of threshold current in III‐V semiconductor lasers: Experimental prediction and explanation

W. Powazinik, R. Olshansky, C. Su, 1984 .

Carrier dependence of the radiative coefficient in III‐V semiconductor light sources

W. Powazinik, R. Olshansky, C. Su, 1984 .

Preparation, Installation, And Calibration Of A 152 Fiber Imaging Experiment At The Nevada Test Site

Douglas R. Thayer, P. B. Lyons, L. D. Looney, 1982, Optics & Photonics.