A. Ishitani

发表

Theoretical estimation of absorption coefficients of various polymers at 13 nm

Hiroaki Oizumi, Ei Yano, Shinji Okazaki, 2000 .

XPS studies by use of the digital difference spectrum technique of functional groups on the surface of carbon fiber

T. Takahagi, A. Ishitani, 1984 .

Selective silicon epitaxial growth for device-isolation

Akihiko Ishitani, Naoki Kasai, Nobuhiro Endo, 1986 .

Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas system

Y. Ohshita, A. Ishitani, 1989 .

Crystalline Defects in Selectively Epitaxial Silicon Layers

N. Endo, H. Kitajima, A. Ishitani, 1983 .

CMOS technology using SEG isolation technique

N. Endo, N. Kasai, Y. Kurogi, 1983, 1983 International Electron Devices Meeting.

Local Loading Effect in Selective Silicon Epitaxy

N. Endo, A. Ishitani, H. Tsuya, 1984 .

Charge transfer adsorption in silicon vapor‐phase epitaxial growth

T. Takada, Y. Ohshita, A. Ishitani, 1988 .

Novel device isolation technology with selective epitaxial growth

N. Endo, A. Ishitani, Y. Kurogi, 1982, 1982 International Electron Devices Meeting.

Novel device isolation technology with selective epitaxial growth

Nobuhiro Endo, Y. Kurogi, A. Ishitani, 1984, IEEE Transactions on Electron Devices.

FT‐IR study of the stabilization reaction of polyacrylonitrile in the production of carbon fibers

M. Fukuhara, T. Takahagi, A. Ishitani, 1986 .

XPS studies on the chemical structure of the stabilized polyacrylonitrile fiber in the carbon fiber production process

M. Fukuhara, T. Takahagi, A. Ishitani, 1986 .

Application of X-ray photoelectron spectroscopy to surface analysis of carbon fiber

A. Ishitani, 1981 .

Theoretical study on silicon‐nitride film growth: Ab initio molecular orbital calculations

S. Koseki, A. Ishitani, 1992 .

Theoretical investigations on electron trap generation by fluorine atoms in SiO2 film

K. Raghavachari, G. Gilmer, S. Hillenius, 1995 .

Prebaking and silicon epitaxial growth enhanced by UV radiation

Y. Ohshita, K. Tanigaki, A. Ishitani, 1987 .

Chemical Vapor Deposition of ( Ba , Sr ) TiO3

Y. Miyasaka, A. Ishitani, P. Lesaicherre, 1995 .

Lattice defect in selective epitaxial silicon and laterally overgrown regions on SiO2

N. Endo, N. Kasai, H. Kitajima, 1989 .

Silicon Selective Epitaxial Growth and Electrical Properties of Epi/Sidewall Interfaces

N. Endo, N. Kasai, H. Kitajima, 1989 .

1/4-µm CMOS isolation technique using selective epitaxy

Nobuhiro Endo, N. Kasai, H. Kitajima, 1987, IEEE Transactions on Electron Devices.

Facet Formation in Selective Silicon Epitaxial Growth

N. Endo, N. Kasai, H. Kitajima, 1985 .

Time-dependent density functional theory calculations of the photoabsorption of fluorinated alkanes

David A. Dixon, Nobuyuki Matsuzawa, Akihiko Ishitani, 2003 .

Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition

Y. Miyasaka, A. Ishitani, P. Lesaicherre, 1993 .

Structural and Electrical Characterization of SrTiO3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition

Y. Miyasaka, A. Ishitani, P. Lesaicherre, 1993 .

XPS study on the surface structure of carbon fibers using chemical modification and C1s line shape analysis

T. Takahagi, A. Ishitani, 1988 .

Single‐crystal Sr2Nb2O7 film optical waveguide deposited by rf sputtering

A. Ishitani, M. Kimura, 1976 .

Characterization of commercially available PAN (polyacrylonitri1e)-based carbon fibers

K. Morita, A. Ishitani, Y. Murata, 1986 .

Time-Dependent Density Functional Theory Calculations of Photoabsorption Spectra in the Vacuum Ultraviolet Region

David A. Dixon, Akihiko Ishitani, Tsuyoshi Uda, 2001 .

On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl4

K. Hirose, Y. Okamoto, Y. Mochizuki, 1995 .

Scaled CMOS technology using SEG isolation and buried well process

N. Kasai, A. Ishitani, Y. Kurogi, 1986, IEEE Transactions on Electron Devices.

SiO2 / Si Interface Structures and Reliability Characteristics

Akihiko Ishitani, Masaru Tsukiji, E. Hasegawa, 1995 .

Preparation of SrTiO 3 Thin Films by Ecr and Thermal Mocvd

Y. Miyasaka, A. Ishitani, P. Lesaicherre, 1993 .

Multi-Coil System for Electron Cyclotron Resonance Plasma Generation

S. Samukawa, A. Ishitani, Tsuyoshi Nakamura, 1992 .

Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source

S. Samukawa, A. Ishitani, Tsuyoshi Nakamura, 1992 .

Plasma research activities in the association of super-advanced electronics technologies

M. Sekine, S. Samukawa, A. Ishitani, 1998 .

Theoretical Investigation on the Reactions of Dichlorosilane with Ammonia.

S. Koseki, A. Ishitani, 1992 .

Metastable atomic configurations for oxygen adsorption on Si (100) surfaces

A. Oshiyama, Y. Miyamoto, A. Ishitani, 1990 .

Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition

Iwao Nishiyama, Akihiko Ishitani, Satoshi Kamiyama, 1993 .

Second harmonic generation in a sputtered LiNbO3 film on MgO

A. Ishitani, T. Matsubara, K. Nunomura, 1978 .

XPS study of an ion sputtering process of fluoropolymers using Monte Carlo simulation

T. Takahagi, A. Ishitani, 1987 .

Mechanism of leakage current through the nanoscale SiO2 layer

K. Ando, S. Nagano, E. Hasegawa, 1994 .

Surface reaction mechanism of SiCl2 with carrier gas H2 in silicon vapor phase epitaxial growth

T. Takada, Y. Ohshita, A. Ishitani, 1991 .

Device Layer Transfer Technique using Chemi-Mechanical Polishing

N. Endo, A. Ishitani, T. Hamaguchi, 1984 .