T. Katsuyama

Opto-electronic Devices Using Polariton propagation

Masataka Shirai, Kazuhiko Hosomi, Junji Shigeta, 1997 .

Coaxial fiber-Bragg-grating external-cavity semiconductor laser module without temperature control

Jun-ichi Hashimoto, Kazunori Yoshida, T. Kato, 2001, Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).

Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

K. Fujii, M. Shimazu, T. Katsuyama, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-mum GaInAs-GaInP strained quantum-well laser

I. Yoshida, T. Katsuyama, J. Hashimoto, 1997 .

Atomic layer epitaxy of III‐V binary compounds

Salah M. Bedair, T. Katsuyama, M. A. Tischler, 1985 .

Defect reduction in GaAs epitaxial layers using a GaAsP‐InGaAs strained‐layer superlattice

Salah M. Bedair, T. Katsuyama, M. A. Tischler, 1985 .

Amplified coarse WDM system employing uncooled fiber Bragg grating lasers with 600 GHz channel spacing

Masayuki Nishimura, Jun-ichi Hashimoto, T. Katsuyama, 2003, OFC 2003 Optical Fiber Communications Conference, 2003..

Highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser

T. Katsuyama, T. Katsuyama, J. Hashimoto, 2000, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).

Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

Jun-ichi Hashimoto, T. Katsuyama, J. Shinkai, 1990 .

New laterally selective growth technique by metalorganic chemical vapor deposition

Salah M. Bedair, T. Katsuyama, M. A. Tischler, 1986 .