J. Gong

发表

Electro-colorimetric hydrogen gas sensor based on Pt-functionalized In_2O_3 nanopushpins and InGaN/GaN multiple quantum wells

Tai-Yuan Lin, T. Chen, Han-Yu Shih, 2012 .

Deposition of GaN films on (111) Si substrates by alternate supply of TMG and NH3

J. Gong, M. Yeh, Yu-Li Tsai, 2004 .

Growth and characterization of GaN and AlN films on (111) and (001) Si substrates

J. Gong, M. Yeh, Cheng-Liang Wang, 2003 .

Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers

C. Lin, Tai-Yuan Lin, W. Liao, 2005 .

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

Kuo-Yi Yen, Tai-Yuan Lin, J. Gong, 2014 .

Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD

Kuo-Yi Yen, Tai-Yuan Lin, P. Lin, 2012, IEEE Photonics Technology Letters.

Atomic layer epitaxy of AlGaAs

N. El-Masry, S. Bedair, D. Jung, 1990 .

Properties of Cu2ZnSnS4 Films by Sulfurization of CuS-SnS-ZnS Precursors Using Ditert-butylsulfide at Atmospheric Pressure

J. Tsai, J. Gong, Ko-Ying Lo, 2015 .

Structural defects of GaN deposited on (111) Si with Gd2O3-related buffer layers

J. Gong, H. Hsu, Ko-Ying Lo, 2017 .

Structural characteristics of ZnO films grown on (0001) or (11−20) sapphire substrates by atomic layer deposition

Kuo-Yi Yen, J. Gong, W. L. Chen, 2011 .

Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O

F. Jih, Kuo-Yi Yen, Tai-Yuan Lin, 2009 .

Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

D. Lin, Tai-Yuan Lin, Kuo-Jen Chang, 2008 .

On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers

Tai-Yuan Lin, W. Liao, J. Gong, 2005 .

Influence of low-temperature AlGaN intermediate multilayer structures on the growth mode and properties of GaN

J. Gong, Yu-Li Tsai, 2004 .

Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers

J. Gong, Yu-Li Tsai, 2004 .

Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3

Tai-Yuan Lin, Y. Cherng, W. Lan, 2002 .

Characterization of Radial ZnO-Core/ZnS-Shell Nanowire Heterostructures ALD-Deposited at Atmospheric Pressure Using DEZn, N2O and DTBS

Tai-Yuan Lin, J. Gong, Sheng‐Wen Wen, 2016 .

Influence of N2O/TEGa Ratio on Deposition of β-Ga2O3 Films and Performance of Au-β-Ga2O3-Au Solar-Blind Photodetectors

Tai-Yuan Lin, Chun-Ying Huang, P. Liao, 2021 .

Growth and characterization of strained GaP films and strainedbarrier GaP/GaAs/GaP quantum wells on GaAs substrates

S. Bedair, J. Gong, 1994 .

Influence of the trench depths of grooved GaN templates on the characteristics of overgrown AlGaN films

C. Lin, Tai-Yuan Lin, W. Liao, 2006 .

Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

Kuo-Yi Yen, Tai-Yuan Lin, Yen‐Ting Lin, 2009 .

On the physical properties of In2O3 films grown on (0001) sapphire substrates by atomic layer deposition

Kuo-Yi Yen, J. Gong, H. Su, 2011 .

Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3

Tai-Yuan Lin, Y. Chen, J. Gong, 1999 .

Characteristics of Cu(In,Ga)Se2 Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source

F. Jih, Kuo-Yi Yen, S. Liang, 2012 .

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

N. El-Masry, S. Bedair, J. Gong, 1992 .

Organic light-emitting diodes with improved hole-electron balance by using molecular layers of phthalocyanine to modify the anode surface

Shuhua Xu, L. Wan, C. Bai, 2004 .

Observation of compositional pulling phenomenon in AlxGa1−xN (0.4

W. Liao, J. Gong, Yu-Li Tsai, 2003 .

Growth of Wurtzite GaN on (0 0 1) GaAs Substrates at Low Temperature by Atomic Layer Epitaxy

J. Gong, C. Chiang, S. Tu, 1998 .

Effects of Al-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films

Tai-Yuan Lin, W. Liao, J. Gong, 2003 .

Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion

Juntao He, Jen-Bin Shi, W. Liao, 2006 .

Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers

C. Lin, Tai-Yuan Lin, W. Liao, 2006 .

Evidence of the De-multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates

J. Gong, Cheng Liang Wang, 2007 .

Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

J. Gong, Cheng-Liang Wang, 2005 .

Characteristics of misfit dislocations in the GaInP/GaAs heterostructures grown by metalorganic chemical vapor deposition

J. Gong, Shi Hou, Su-Fen Tseng, 2003 .

Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs

C. A. Parker, S. Bedair, P. Colter, 1991 .

Optical Characteristics of GaN Films Overgrown on Wet-etched GaN Templates

D. Lin, K. Lin, J. Gong, 2005 .

Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition

W. Liao, J. Gong, Yu-Li Tsai, 2003 .

Growth of AlGaN and GaN films on (112¯0) Al2O3 substrates and the influence of V/III ratio on the properties of GaN films

Tai-Yuan Lin, W. Liao, Yi-cheng Cheng, 2006 .

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

Kuo-Yi Yen, C. Chang, W. Liao, 2007 .