D. Pascua

Ultra-low-power HEMT and HBT devices and circuit demonstrations

W. Deal, M. Goorsky, M. Lange, 2005, 2005 International Semiconductor Device Research Symposium.

Metamorphic 6.0 /spl Aring/ narrow band gap HBT technology on InP substrates

M. Goorsky, A. Noori, S. Hayashi, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

M. Goorsky, A. Noori, S. Hayashi, 2006 .

Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs

M. Wojtowicz, D. Streit, A. Han, 1997 .

Photoreflectance study of pseudomorphic high electron mobility transistors

M. Wojtowicz, D. Streit, A. Han, 1997 .