E. Sabin

190 GHz InP HEMT MMIC LNA with dry etched backside vias

L. Samoska, T. Gaier, R. Lai, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

GEM technical design report

Joseph A. Paradiso, G. C. Fox, D. Crosetto, 1993 .

0 . 1 μ m InGaAs / InAlAs / InP HEMT Production Process for High Performance and High Volume MMW Applications

M. Barsky, R. Grundbacher, R. Lai, 1999 .

Estimation of the activation energy for Ar/Cl2 plasma etching of InP via holes using electron cyclotron resonance

E. Sabin, 1998 .