O. Kononchuk

发表

Gettering of iron in silicon-on-insulator wafers

G. Rozgonyi, S. Koveshnikov, A. Agarwal, 1997 .

Interface water diffusion in silicon direct bonding

F. Fournel, S. Tardif, F. Rieutord, 2016 .

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

G. Rozgonyi, Z. Radzimski, A. Romanowski, 1997 .

Adaptation of the pseudo-metal-oxide-semiconductor field effect transistor technique to ultrathin silicon-on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling

S. Cristoloveanu, C. Malaquin, O. Kononchuk, 2013 .

Simulation of metallic impurity gettering in silicon by MeV ion implantation

G. Rozgonyi, R. Brown, O. Kononchuk, 1999 .

Internal Dissolution of Buried Oxide in SOI Wafers

F. Allibert, O. Kononchuk, F. Boedt, 2007 .

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

N. Cherkashin, A. Claverie, L. Capello, 2012 .

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

O. Vyvenko, V. Vdovin, O. Kononchuk, 2011 .

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

O. Vyvenko, M. Kittler, M. Trushin, 2009 .

Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface

O. Vyvenko, A. Bondarenko, O. Kononchuk, 2011 .

Electrical levels of dislocation networks in p- and n-type Si

O. Vyvenko, V. Vdovin, O. Kononchuk, 2011 .

DIFFUSION OF IRON IN THE SILICON DIOXIDE LAYER OF SILICON-ON-INSULATOR STRUCTURES

G. Rozgonyi, O. Kononchuk, N. Yarykin, 1998 .

Structures and electronic properties of defects on the borders of silicon bonded wafers

O. Kononchuk, A. Mazilkin, E. Steinman, 2015 .

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

N. Cherkashin, A. Claverie, F. Cristiano, 2014 .

Crack Front Interaction with Self-Emitted Acoustic Waves.

S. Tardif, F. Rieutord, A. Reinhardt, 2018, Physical review letters.

Three-dimensional X-FEM modeling of crack coalescence phenomena in the Smart CutTM technology

A. Gravouil, D. Landru, O. Kononchuk, 2022, Finite Elements in Analysis and Design.

Fracture dynamics in implanted silicon

J. Penot, S. Tardif, F. Rieutord, 2015 .

Development of microcracks in hydrogen-implanted silicon substrates

J. Penot, F. Rieutord, F. Mazen, 2013 .

Kinetics and coupled dynamics of dewetting and chemical reaction in Si/$$\hbox {SiO}_2$$/Si system

F. Leroy, S. Curiotto, D. Landru, 2020 .

Kinetics and coupled dynamics of dewetting and chemical reaction in Si/SiO2/Si system

F. Leroy, S. Curiotto, D. Landru, 2020 .

Bacterial lux-biosensors: Constructing, applications, and prospects

V. Chistyakov, O. Kononchuk, S. Bazhenov, 2023, Biosensors and Bioelectronics: X.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

G. Rozgonyi, A. Knights, S. Koveshnikov, 1998 .

Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3

N. Cherkashin, S. Schamm-Chardon, O. Kononchuk, 2021 .

Fracture Wake Patterns in Brittle Solids

S. Tardif, F. Rieutord, F. Mazen, 2021 .

Photorhabdus lux-operon heat shock-like regulation

A. P. Zarubina, O. Kononchuk, S. Bazhenov, 2023, Heliyon.

Influence of rapid thermal processing on carrier concentration in high resistivity silicon

I. Bertrand, L. Capello, O. Kononchuk, 2017 .

EVOLUTION OF DEEP-LEVEL CENTERS IN P-TYPE SILICON FOLLOWING ION IMPLANTATION AT 85 K

G. Rozgonyi, R. Zuhr, R. Brown, 1999 .

Electron beam induced capacitance

E. Yakimov, O. Kononchuk, 1992 .

Scanning deep level transient spectroscopy (SDLTS) investigations of deep level spatial distribution in implanted silicon

E. Yakimov, O. Kononchuk, 1990 .

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

G. Rozgonyi, R. Zuhr, R. Brown, 1998 .

Application of the O-lattice theory for the reconstruction of the high-angle near 90? tilt Si(1 1 0)/(0 0 1) boundary created by wafer bonding

N. Cherkashin, M. Hÿtch, S. Reboh, 2012 .

Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

N. Cherkashin, M. Hÿtch, O. Kononchuk, 2011 .

Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks

M. Reiche, M. Kittler, T. Arguirov, 2009 .

Brittle fracture studied by ultra-high-speed synchrotron X-ray diffraction imaging

A. Petit, M. Olbinado, A. Rack, 2022, Journal of applied crystallography.

Multi-Scale Thickness and Roughness Characterization of Thin Silicon-On-Insulator Films

A. Claverie, P. Acosta-Alba, O. Kononchuk, 2013 .

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

S. Koveshnikov, O. Kononchuk, 1998 .

Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

O. Vyvenko, A. Loshachenko, O. Kononchuk, 2013 .

Effect of dislocation loop size on the deep level transient spectrum in Si

E. Yakimov, O. Kononchuk, V. Nikitenko, 1994 .

Surface self-diffusion of silicon during high temperature annealing

A. Claverie, P. Acosta-Alba, O. Kononchuk, 2014 .

In Situ Observation of Pressurized Microcrack Growth in Silicon

F. Rieutord, F. Mazen, D. Landru, 2021, physica status solidi (a).

Silicon-On-Insulator (SOI) Technology : Manufacture and Applications

O. Kononchuk, B. Nguyen, 2014 .

Silicon Surface Smoothening Dynamics: Diffusion and Desorption

O. Kononchuk, Young-Pil Kim, C. Figuet, 2020 .

Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates

O. Kononchuk, C. Figuet, 2010 .