Shinji Migita

发表

Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element

Koji Kajimura, Shigeki Sakai, Shinji Migita, 1998, Optics & Photonics.

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks

Meishoku Masahara, Shinji Migita, Yukinori Morita, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Meishoku Masahara, Shinji Migita, Kazuhiko Endo, 2013, 2013 Symposium on VLSI Circuits.

0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Takashi Matsukawa, Meishoku Masahara, Tadashi Nakagawa, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Nanometer level etching and deposition of Bi-Sr-Ca-Cu-O superconducting thin films

Shinji Migita, Yuji Kasai, Atsushi Suzuki, 1996, Photonics West.

Ferroelectric-HfO2Devices Technology and Manufacturing for Memory and Logic Applications

Shinji Migita, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Akira Toriumi, Shinji Migita, Tsutomu Ikegami, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology

Yohei Hori, Hiroshi Fuketa, Takashi Matsukawa, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2014 .

PBTI for N-type tunnel FinFETs

Hiromi Yamauchi, Yuki Ishikawa, Takashi Matsukawa, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

Tomonori Nishimura, Akira Toriumi, Shinji Migita, 2018 .

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Meishoku Masahara, Tetsuji Yasuda, A. Tanabe, 2014 .

Sub-nm EOT ferroelectric HfO 2 on p+Ge with highly reliable field cycling properties

Akira Toriumi, Shinji Migita, Takeaki Yajima, 2017 .

Experimental Demonstration of Ultrashort-Channel (3 nm) Junctionless FETs Utilizing Atomically Sharp V-Grooves on SOI

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Transactions on Nanotechnology.

Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks

Shinji Migita, Yukinori Morita, Wataru Mizubayashi, 2009 .

On the nonlocal modeling of tunnel-FETs Device and Compact models

Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, 2013 .

Ferroelectric phase stabilization of HfO2 by nitrogen doping

Tomonori Nishimura, Akira Toriumi, Shinji Migita, 2016 .

Extremely Scaled (~0.2 nm) Equivalent Oxide Thickness of Higher-k (k = 40) HfO₂ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing (Special Issue : Solid State Devices and Materials (1))

Shinji Migita, Yukinori Morita, Wataru Mizubayashi, 2012 .

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Electron Device Letters.

Tunnel Field-Effect Transistor with Epitaxially Grown Tunnel Junction Fabricated by Source/Drain-First and Tunnel-Junction-Last Processes

Meishoku Masahara, A. Tanabe, Shinji Migita, 2013 .

Accurate evaluation of Ge metal—insulator—semiconductor interface properties

Shinichi Takagi, Shinji Migita, Yukinori Morita, 2011 .

Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

Akira Toriumi, Shinji Migita, Junichi Hattori, 2016 .

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks

Akira Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

Akira Toriumi, Shinji Migita, Junichi Hattori, 2016 .

Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants (Special Issue : Solid State Devices and Materials)

Meishoku Masahara, Shinji Migita, Yukinori Morita, 2013 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Fabrication of Direct-Contact Higher-k HfO2 Gate Stacks by Oxygen-Controlled Cap Post-Deposition Annealing

Shinji Migita, Yukinori Morita, Wataru Mizubayashi, 2011 .