D. Jousse

发表

Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon

M. Habrard, M. Bensouda, J. Bruyère, 1989 .

Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride

D. Krick, J. Kanicki, P. Lenahan, 1988 .

Study of localized states in amorphous chalcogenide Sb2S3 films

É. Bustarret, D. Jousse, M. S. Droichi, 1988 .

Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition

F. Maury, A. Deneuville, D. Jousse, 1986 .

Observation of multiple silicon dangling bond configurations in silicon nitride

J. Stathis, J. Kanicki, D. Jousse, 1989 .

Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride

J. Stathis, J. Kanicki, D. Jousse, 1989 .

Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films

J. Kanicki, A. Gelatos, D. Jousse, 1989 .

Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride

J. Kanicki, D. Jousse, 1989, IEEE Electron Device Letters.

Relationship between the physicochemical and electronic properties of sputtered hydrogenated amorphous silicon films: The effect of substrate temperature

J. Stoquert, D. Jousse, J. Saïd, 1985 .

Disorder and defects in sputtered a-SiH from subgap absorption measurements

É. Bustarret, D. Jousse, F. Boulitrop, 1985 .

Investigation of the light-induced effects in nitrogen-rich silicon nitride films

J. Kanicki, D. Jousse, 1989 .

Capacitance temperature analysis of midgap states in hydrogenated amorphous silicon

S. Deleonibus, D. Jousse, 1983 .

Schottky barriers on sputtered hydrogenated amorphous silicon - Photovoltaic properties and capacitance-voltage characteristics

P. Viktorovitch, L. Vieux-Rochaz, D. Jousse, 1979 .

Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements

P. Viktorovitch, D. Jousse, 1980 .

Boron doping of amorphous hydrogenated silicon films prepared by r.f. sputtering

J. Bruyère, D. Jousse, J. Saïd, 1985 .

Highly conductive and transparent amorphous tin oxide

I. Chambouleyron, D. Jousse, C. Constantino, 1983 .

On the interpretation of sub-bandgap optical absorption in a-Si:H

É. Bustarret, D. Jousse, F. Boulitrop, 1985 .

IR, ESR and resistivity measurements on amorphous silicon oxi-nitride films prepared by PECVD at low temperature

Jie Liu, Y. Cros, D. Jousse, 1987 .

Direct electron spin resonance determination of dangling bond energies in rf sputtered hydrogenated amorphous silicon

D. Jousse, 1986 .

Recombination at dangling bonds and band tails: Temperature dependence of photoconductivity in hydrogenated amorphous silicon

J. Bruyère, D. Jousse, F. Vaillant, 1988 .

Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams

S. Iyer, S. Delage, D. Jousse, 1991 .

Hydrogen Passivation of Grain Boundaries in Polycrystalline Silicon Deposited by Molecular Beams

S. Iyer, S. Delage, D. Jousse, 1987 .

Thickness dependent properties of sputtered a-Si:H from Raman and conductivity measurement

A. Deneuville, J. Bruyère, D. Jousse, 1983 .

Light‐induced effects in Schottky diodes on hydrogenated amorphous silicon

D. Jousse, B. Bourdon, R. Basset, 1980 .

Light-induced aging effects in Schottky diodes on sputtered hydrogenated amorphous silicon (a-SiH) : interpretation of the photovoltaic stability

P. Viktorovitch, L. Vieux-Rochaz, D. Jousse, 1980 .

Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films

Jerzy Kanicki, James H. Stathis, D. Jousse, 1988, Other Conferences.

Doping efficiency in r.f.-sputtered hydrogenated amorphous silicon

A. Deneuville, É. Bustarret, J. Bruyère, 1987 .