J. Siéfert

发表

In-situ determination of potential profiles in a-Si: H

J. Siéfert, G. Rosny, 1986 .

Large area deposition of a-Si PV modules

J. Meot, J. Schmitt, J. Siéfert, 1990, IEEE Conference on Photovoltaic Specialists.

Shape coexistence and other aspects of nuclear structure in40Ar

R. Lehmann, J. Siéfert, F. Glatz, 1983 .

Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma

J. Perrin, B. Drévillon, J. Schmitt, 1983 .

Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium

Z. Wu, J. Siéfert, B. Equer, 1992 .

Is B(CH 3 ) 3 An Interesting Alternative to B 2 H 6 for a-Si:H p Doping?

J. Siéfert, B. Equer, P. Cabarrocas, 1989 .

Mass spectrometric study of NF3 plasma etching of silicon

J. Meot, J. Perrin, J. Schmitt, 1990 .

Light induced defects in a-Si:H : Saturation or equilibrium?

Z. Wu, J. Siéfert, B. Equer, 1991 .

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

B. Drévillon, P. Cabarrocas, Satyendra Kumar, 1989 .

High-spin states in26Mg

R. Lehmann, J. Siéfert, F. Glatz, 1986 .

Structure of28Si from the spectroscopy of high-spin states

R. Lehmann, J. Siéfert, F. Glatz, 1981 .

The structure of27Al

J. Siéfert, F. Glatz, B. Wildenthal, 1988 .

Structure of30Si from the spectroscopy of highly excited states

R. Lehmann, J. Siéfert, F. Glatz, 1980 .

Excited K π = 0 + Rotational Band in Si 28

J. Siéfert, F. Glatz, P. Betz, 1981 .

Search for missing predicted high-spin states in28Si

R. Lehmann, J. Siéfert, F. Glatz, 1986 .

Spectroscopy of highly excited states in29Si

R. Lehmann, J. Siéfert, F. Glatz, 1982 .

In-situ determination of surface states in undoped and doped a-Si:H

J. Siéfert, 1989 .

In situ measurements of the Fermi level position in undoped and doped a-Si:H films

J. Siéfert, G. Rosny, 1985 .