D. Ast

发表

Thickness dependent conductivity of n-type hydrogenated amorphous silicon

M. Brodsky, D. Ast, 1980 .

Effects of RF Sputtering Parameters on C-axis Aligned Crystalline (CAAC) InGaZnO4 Films Using Design of Experiment (DOE) Approach

K. E. Roach, M. Thompson, R. G. Greene, 2016 .

Chemical Etch Rate and X-Ray Structure of Reactive Sputtered c-Axis Aligned Crystalline InxGayZnzO4 Films

M. Thompson, R. G. Greene, D. Ast, 2015 .

Effect of phosphorus composition on the structural quality of GaInP/GaAsP short‐period superlattices

J. Shealy, D. Ast, K. L. Whittingham, 1995 .

Evidence for Percolation-Controlled Conductivity in AmorphousAsxTe1−xFilms

D. Ast, 1974 .

Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

D. Ast, R. Proano, R. S. Misage, 1991 .

Chapter 7 a-Si: H FET-Addressed LCD Panel

D. Ast, 1984 .

Structure and recombination in InGaAs/GaAs heterostructures

Eugene A. Fitzgerald, Peter D. Kirchner, Jerry M. Woodall, 1988 .

Characterization and elimination of surface defects in Gax In1−xP grown by organometallic vapor phase epitaxy

J. Shealy, D. Ast, M. Matragrano, 1994 .

Elimination of interface defects in mismatched epilayers by a reduction in growth area

E. Fitzgerald, J. Woodall, P. Kirchner, 1988 .

Dislocation structure, formation, and minority‐carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors

L. Eastman, E. Fitzgerald, Y. Ashizawa, 1988 .

The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures

L. Eastman, E. Fitzgerald, Y. Ashizawa, 1988 .

High accelerating voltage electron beam induced current (EBIC) of thick and thin solar silicon specimens

S. Hyland, D. Ast, G. Perreault, 1993 .

Poly-Si Thin Film and Substrate Materials

O. Bonnaud, T. Mohammed-Brahim, D. Ast, 2004 .

The quasicrystalline transformation in the AlCr system

M. Nastasi, J. Mayer, H. Johnson, 1986 .

Stress relaxation in coiled ribbons of Fe40Ni40P14B6 and Fe29Ni49P14B6S6

D. Ast, D. Krenitsky, D. Ast, 1979 .

Relationship between mechanical and electrical properties in solarex semicrystalline silicon

S. Hyland, D. Ast, G. Perreault, 1990 .

Investigation of surface mass transport in Al–Si–Ca–oxide glasses via the thermal induced decay of submicron surface gratings

A. Ellison, D. Ast, Linlin Wang, 2007 .

Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon

Hansoo Kim, D. Ast, J. Couillard, 1998 .

Electronic properties of AlMn and AlMnSi quasicrystals

D. Ast, R. Kuentzler, Y. Dossmann, 1989 .

Hybrid reflections from multiple x-ray scattering in epitaxial oxide films

D. Schlom, A. Soukiassian, P. King, 2017 .

Process-induced defects in solar cell silicon

D. Ast, B. Cunningham, R. Gleichmann, 1985 .

Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Lester F. Eastman, Eugene A. Fitzgerald, William J. Schaff, 1988 .

Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

T. Anderson, B. Pathangey, G. Watson, 1993 .

The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates

Y. Hayakawa, T. Anderson, B. Pathangey, 1992 .

The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In 0.12 Ga 0.88 As/GaAs Heterostructures

E. Fitzgerald, J. Woodall, P. Kirchner, 1987 .

Measurement of the mean free path of dislocation glide in the InGaAs/GaAs materials system

J. Shealy, G. Watson, D. Ast, 1996 .

The structure of solvent crazes in polystyrene

E. Kramer, D. Ast, Heider G. Krenz, 1976 .

Micromechanics of solvent crazes in polystyrene

E. Kramer, D. Ast, Heider G. Krenz, 1976 .

Fabrication and electrical activity of twist boundaries in silicon

S. Hyland, D. Ast, G. Perreault, 1991 .

TEM observations on grain boundaries in sintered silicon, part 1

H. Foll, D. Ast, 1978 .

Electronmicroscopic evidence for a columnar‐void‐type structure in sputtered NbN films

D. Ast, J. Gavaler, W. Wagner, 1974 .

Mechanical properties of methanol crazes in poly(methyl methacrylate)

E. Kramer, D. Ast, Heider G. Krenz, 1978 .

Full recovery of electron damage in glass at ambient temperatures.

J. Silcox, K. Mkhoyan, R. Dieckmann, 2006, Physical review letters.

Texture studies of Si1−xGex thin films by x-ray diffraction and transmission electron microscopy

T. Kamins, D. Ast, W. Qin, 2001 .

Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

T. Kamins, D. Ast, W. Qin, 2000 .

The structure of second and third order twin boundaries in silicon

M. Vaudin, D. Ast, B. Cunningham, 1983 .

High resolution electron microscopy of a S = 27 boundary in silicon

D. Ast, H. Strunk, B. Cunningham, 1982 .

The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs

M. Thompson, A. Fischer-Colbrie, G. Watson, 1990 .

The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon

M. Vaudin, D. Ast, 1982 .

Electron diffraction and microscopy studies of the structure of grain boundaries in silicon

C. B. Carter, H. Föll, D. Ast, 1981 .

Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs

G. Watson, D. Ast, 2003 .

A study of the effects of thermal oxidation and hydrogen passivation on CVD polysilicon pin solar cells using DLTS

D. Ast, C. B. Moore, 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

Image intensification and the electron microscopy of radiation sensitive polymers

E. Thomas, D. Ast, 1974 .

The control and properties of misfit dislocations in OMCVD growth epitaxial layers

Y. Hayakawa, G. Watson, T. Anderson, 1990 .

Cathodoluminescence of Ingaas-GaAs Single Heterostructures

K. Kavanagh, E. Fitzgerald, J. Woodall, 1986 .

Carbon Precipitation in Cz and Efg Silicon

J. Kalejs, S. Feng, D. Ast, 1985 .

Viscosity and crystallization kinetics of As2Se3

D. W. Henderson, D. Ast, 1984 .

Turbulent flow in chill block casting

D. Ast, P. G. Zielinski, 1983 .

Surface structure and surface lattice constant of (001) vapor deposited Au films using high resolution transmission electron microscopy

D. Ast, W. Krakow, 1976 .

Measurements of Grain Boundary Trap Density and Hydrogen Diffusivity in Polycrystalline Silicon Fet's

D. Ast, C. B. Moore, 1990 .

Fracture toughness and yield strength of annealed NiFe base metallic glasses

D. Ast, D. Krenitsky, 1976 .

Etch rate and surface morphology of plasma etched glass and glass-ceramic substrates

D. Ast, Junting Liu, J. G. Couillard, 2004 .

Low Cost Glass and Glass-Ceramic Substrates for Thin-Film Silicon Solar Cells: Final Subcontract Report, 25 January 2001

D. Ast, N. Nemchuk, S. Krasula, 2002 .

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

D. Ast, Junting Liu, J. G. Couillard, 2000 .

Relaxation and embrittlement of Fe40Ni40Si8B12 glass

D. Ast, P. G. Zielinski, 1984 .

Temperature dependence of the flow stress and ductility of annealed and unannealed amorphous Fe40Ni40P14B6

D. Ast, D. Krenitsky, 1979 .

Oxidation of polycrystalline‐SiGe alloys

W. J. Edwards, T. Kamins, H. Tsutsu, 1994 .

Diffusion of Ge Along Grain Boundaries During Oxidation of Polycrystalline Silicon-Germanium Films

W. J. Edwards, T. Kamins, H. Tsutsu, 1993 .

Oxidation of Epitaxial- and Polycrystalline-SiGe Alloys

W. J. Edwards, T. Kamins, H. Tsutsu, 1993 .

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Eugene A. Fitzgerald, Peter D. Kirchner, Jerry M. Woodall, 1989 .

Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

M. Brodsky, D. Ast, 1980 .

THE FIELD ION MICROSCOPY OF GOLD

D. Seidman, D. Ast, 1968 .

Structural Evaluation of Interfaces by Electron Diffraction

T. Sullivan, D. Ast, 1985 .

Flux pinning by thin chromium layers

E. Kramer, D. Ast, W. Yetter, 1982 .

Investigation of the reversibility of deformation in silicon sheets

S. Hyland, D. Ast, C. Dube, 1990 .

CHAPTER 7 - Structural Characterization of Defects in Solar Silicon

D. Ast, B. Cunningham, 1985 .

Origin of the fringe structure observed in high resolution bright-field electron micrographs of amorphous materials

B. M. Siegel, D. Ast, W. Goldfarb, 1976 .

Critical fields of multilayered films of Al and Ge

D. Ast, T. Haywood, 1978 .

Yield stress of a composite consisting of amorphous Ni78Si10B12 and μm sized WC particles

T. Masumoto, H. Kimura, D. Ast, 1987 .

Development and electrical properties of undoped polycrystalline silicon thin film transistors for guest-host LCDs

D. Ast, R.E. Proano, D.G. Ast, 1988, Conference Record of the 1988 International Display Research Conference.

Slip bands in metallic glasses

D. Ast, P. G. Zielinski, 1983 .

Preparation of rapidly solidified ribbons with second phase particles

D. Ast, P. G. Zielinski, 1983 .

Yield and deformation of metallic glasses strengthened by post-extrusion addition of second phase particles

D. Ast, P. G. Zielinski, 1984 .

Load relaxation studies of a metallic glass

Che-yu Li, T. D. Hadnagy, D. Ast, 1978 .

Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4

D. Muller, M. Thompson, R. G. Greene, 2014 .

Variation of lattice parameter with silicon concentration in n‐doped, liquid‐encapsulated Czochralski GaAs single crystals

G. Watson, D. Ast, A. Elliot, 1989 .

First and second order twin boundaries in edge defined film growth silicon ribbon

H. Strunk, D. Ast, B. Cunningham, 1982 .

High Resolution Electron Microscopy (HREM) Study of Chemically Vapor Deposited Polycrystalline Si 1-x Ge x Thin Films

T. Kamins, D. Ast, W. Qin, 2000 .

Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem

D. Ast, B. Cunningham, H. Strunk, 1980 .

Pressure dependence and tensile stress dependence of the resistivity of an FeNi base metallic glass

D. Ast, D. Krenitsky, 1976 .

Creep Deformation of Ultrafine Grained Ni 7 5 B 1 7 Si 8

D. Ast, G. Nussbaum, 1985 .

Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals

D. Ast, L. Lam, Szu-ke Chen, 1999 .

High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing

M. Thompson, R. G. Greene, D. Ast, 2015 .

Effects of the presence/absence of HCl during gate oxidation on the electrical and structural properties of polycrystalline silicon thin‐film transistors

Dieter G. Ast, D. Ast, R. E. Proano, 1989 .

Ebic/Tem Investigation of Defects in Solar Cell Silicon

H. Strunk, D. Ast, B. Cunningham, 1981 .

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

M. Thompson, R. G. Greene, D. Ast, 2015 .

Recovery of edge-defined film-fed grown silicon Dislocation/twin boundary interaction and mechanisms for twin-induced grain boundary formation

M. Vaudin, D. Ast, R. Gdeichmann, 1985 .

Electron Microscopy of WEB‐Dendritic Silicon

D. Ast, H. Strunk, B. Cunningham, 1982 .

Oxygen measurements in thin ribbon silicon

A. Baghdadi, S. Hyland, D. Ast, 1987 .

Superplastic deformation of an ultrafine grained intermetallic alloy prepared by crystallization of a metallic glass

R. Raj, D. Ast, S. Reusswig, 1984 .

Preparation of homogeneous AsxTe1-x films with 0.2

D. Ast, 1973 .

Anomalous Behavior in the Resistivity of N-I-N Polysilicon Resistors After Hydrogenation

D. Ast, C. B. Moore, 1992 .

Structural and Electrical Properties of Evaporated-Amorphous and Vitreous-Amorphous V-VI Compounds

D. Ast, 1973 .

High Resolution Electron Microscopy of Grain Boundaries in Silicon

D. Ast, B. Cunningham, 1981 .

Deformation of Amorphous Fe40Ni40P14B6 under Compression to 250 Kbar.

H. Kimura, W. Bassett, D. Ast, 1982 .

Evidence for ideal elastic-plastic deformation in FeNi-based metallic glasses

D. Ast, D. Krenitsky, 1980 .

Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension

J. Shealy, D. Ast, M. Matragrano, 1996 .

The thermal stability of lattice mismatched InGaAs grown on patterned GaAs

Y. Hayakawa, B. Pathangey, G. Watson, 1991 .

Observation of radiation defects generated in edge defined film fed growth silicon ribbons under 400 kV irradiation in the high‐resolution electron microscope

D. Ast, J. Kątcki, 1988 .

Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons

D. Ast, J. Kątcki, 1989 .

Noble gas imaging of gold in the field ion microscope

D. Seidman, D. Ast, 1971 .

45.2: Effects of RF Sputtering Parameters and Film Composition on C‐Axis Aligned Crystalline (CAAC) IGZO Films

M. Thompson, R. G. Greene, D. Ast, 2015 .

Chemical treatment of glass substrates

J. Gregory Couillard, Dieter G. Ast, Francis P. Fehlner, 1997 .

A Stem Study of P and Ge Segregation to Grain Boundaries in Si 1-x Ge x Thin Films

T. Kamins, D. Ast, W. Qin, 1999 .

Lower limit of detectability at high spatial resolution of As implanted into Si using the Jeol 200CX in the STEM-EDX mode

D. Ast, P. Renteln, 1988 .

21.4: Deposition Conditions and HRTEM Characterization of CAAC IGZO

D. Muller, M. Thompson, R. G. Greene, 2015 .

The effects of substrates on the characteristics of polycrystalline silicon thin film transistors

O. Awadelkarim, D. Ast, J. Couillard, 1998 .

Dislocations and Interfaces in Semiconductors

Krishna Rajan, J. Narayan, D. G. Ast, 1988 .

Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy

J. Shealy, D. Ast, K. L. Whittingham, 1995 .

Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si1−xGex films

T. Kamins, D. Ast, W. Qin, 2002 .

Grain Boundaries in Semiconductors

D. Ast, 1992 .

Free-Standing Thin Films Containing Hexagonally Organized Silver Nanocrystals in a Polymer Matrix

D. Ast, M. H. Lim, 2001 .

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

T. Anderson, B. Pathangey, G. Watson, 1993 .

Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates

Y. Hayakawa, T. Anderson, G. Watson, 1991 .

Growth criteria for solvent crazes

E. Kramer, D. Ast, Heider G. Krenz, 1978 .

Holographic interferometry of crazes in polycarbonate

E. Kramer, T. Peterson, D. Ast, 1974 .

The structure of laser written lines in a Te81Ge15As4 glass

M. Brodsky, R. Gutfeld, P. Chaudhari, 1972 .