C. Wie

发表

Nonsaturating Drain Current Characteristic in Short-Channel Amorphous-Silicon Thin-Film Transistors

Chu Ryang Wie, C. Wie, 2010, IEEE Transactions on Electron Devices.

Non-uniform threshold voltage and non-saturating drain current in amorphous-Si TFT after saturation-mode bias temperature stress

C. Wie, Z. Tang, 2010, 2010 IEEE International Reliability Physics Symposium.

Nonuniform threshold voltage profile in a-Si:H thin film transistor stressed under both gate and drain biases

Mun‐Soo Park, C. Wie, Z. Tang, 2008 .

Rocking curve peak shift in thin semiconductor layers

C. Wie, 1989 .

Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions

C. E. Stutz, K. Evans, Z. C. Huang, 1993 .

Energy and Depth Distributions of Interface States and bulk Traps and their Electronic Effects in GalnAs/GaAs Heterojuntions

C. E. Stutz, K. Evans, Z. C. Huang, 1991 .

Interface trap and interface depletion in lattice-mismatched GaInAs/GaAs heterostructures

C. Wie, Y. W. Choi, K. Xie, 1991 .

Z. C. Huang, C. Wie, 1994 .

Z. C. Huang, C. Wie, 1993 .

Cell structure and saturation effects of radiation-hardened power VDMOSFET devices under extreme dose X-ray irradiation

J. E. Gillberg, Mun‐Soo Park, C. Wie, 2003 .

Parameter Extraction of Short-Channel a-Si:H TFT Including Self-Heating Effect and Drain Current Nonsaturation

S. Jin, Mun‐Soo Park, C. Wie, 2010, IEEE Transactions on Electron Devices.

Deep level studies in MBE GaAs grown at low temperature

Z. C. Huang, C. Wie, K. Xie, 1991 .

Electrical measurements of voltage stressed Al2O3/GaAs MOSFET

D. Lee, Z. Tang, P. D. Ye, 2007, Microelectron. Reliab..

X-ray interference in quantum-well laser structures

C. Wie, 1989 .

Ion beam induced damage in CaF2

T. Vreeland, T. Tombrello, C. Wie, 1985 .

A simple and reliable method of thermoelectic effect spectroscopy for semi‐insulating III‐V semiconductors

Z. C. Huang, C. Wie, K. Xie, 1991 .

Current-voltage characteristics of lattice-mismatched GaInAs(n+)/GaAs(p) diodes including thermal annealing effects

Z. C. Huang, C. Wie, 1993 .

Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes

C. E. Stutz, K. Evans, C. Wie, 1990 .

X-ray and Raman studies of MeV ion-bombarded GaInAs/GaAs

G. Burns, J. Woodall, G. D. Pettit, 1989 .

Heterojuncion Study of Ga0.92In08as(P+)/GaAs(n) Diodes: Correlation of Electrical and Strucrural Characteristics

C. E. Stutz, K. Evans, C. Wie, 1989 .

Study of MSM photodetector fabricated on porous silicon

C. Wie, L. Z. Yu, 1993 .

Phonon shifts in ion bombarded GaAs: Raman measurements

G. Burns, M. Cardona, E. Burstein, 1987 .

Annealing Effects in Ion Bombarded GaAs: Raman Measurements.

G. Burns, M. Cardona, E. Burstein, 1987 .

Interface traps and interface recombination in AlGaAs/GaAs quantum well laser diodes

G. Wicks, C. Wie, K. Xie, 1992 .

Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes

G. Wicks, C. Wie, K. Xie, 1991 .

Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing

G. Wicks, C. Wie, K. Xie, 1994 .

Relation between phase stability and mechanical defects in InGa(Al)As/GaAs and ZnSe/GaAs heterostructures under pressure

M. Funato, T. Ritter, B. Weinstein, 1995 .

X-Ray Studies of GaAs/Si and ZnS/Si

S. Vernon, C. Wie, H. M. Kim, 1988 .

Relaxation and rocking‐curve broadening of strained (Ga,In)As single layers on (001) GaAs

C. Wie, 1989 .

Phonon Shifts and Strains in Strained-Layer (Ga 1−x In x )As

G. Burns, J. Woodall, G. D. Pettit, 1987 .

A Quantum Circuit to Construct All Maximal Cliques Using Grover Search Algorithm

C. Wie, 2017, 1711.06146.

Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures

S. Vernon, C. Wie, Y. W. Choi, 1989 .

High resolution x-ray diffraction characterization of semiconductor structures

C. Wie, 1994 .

Formation of ion damage tracks

N. Itoh, T. Tombrello, T. Nakayama, 1984 .

Kinematical x‐ray diffraction model with a new boundary condition for analysis of Bragg‐peak profiles of layered crystals

C. Wie, H. M. Kim, 1991 .

Dynamical x‐ray diffraction from nonuniform crystalline films: Application to x‐ray rocking curve analysis

C. R. Wie, T. A. Tombrello, Thad Vreeland, 1986 .

Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping

H. Luo, R. Beresford, D. Lee, 2007 .

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy

P. Colombo, F. Johnson, G. Wicks, 1991 .

Simpler quantum counting

C. R. Wie, C. Wie, Chu-Ryang Wie, 2019, Quantum Inf. Comput..

Increased peak current in AlAs/GaAs resonant tunneling structures with GaInAs emitter spacer

C. Wie, Y. Choi, Y. Choi, 1992 .

Designing resonant tunneling structures for increased peak current density

C. Wie, Y. Choi, Y. Choi, 1991 .

Improved Kematical X-Ray Rocking Cjrve Analyses

C. Wie, H. M. Kim, 1990 .

X‐ray interference measurement of ultrathin semiconductor layers

D. Hwang, C. Wie, P. L. Liu, 1989 .

Structural and electrical contact properties of LPE grown GaAs doped with indium

C. Wie, J. E. Chen, 1988 .

Effects of In and Sb doping in LPE growth thermodynamics and in GaAs layer qualities

J. F. Chen, C. Wie, 1989 .

X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

J. F. Chen, C. Wie, F. Junga, 1988 .

I-V, C-V, and Hall Effect Studies of Indium-Doped Lpe GaAs

J. F. Chen, C. Wie, K. Xie, 1988 .

Semi‐insulating properties and photoluminescence quenching in Cu‐diffused InP

C. Wie, K. Xie, 1993 .

Transport Modeling and Compensation Mechanism for Semi-Insulating LT-Gaas and InP: Cu

C. Wie, K. Xie, 1991 .

Phosphorus‐vacancy‐related deep levels in GaInP layers

G. Wicks, Z. C. Huang, C. Wie, 1995 .

Phosphorus-Vacancy-Related Deep Levels in Gainp Layers Grown by Molecular Beam Epitaxy

G. Wicks, Z. C. Huang, C. Wie, 1993 .

Shallow levels, deep levels and electrical characteristics in Zn‐doped GaInP/InP

J. F. Chen, W. Anderson, Y. Lee, 1990 .

Characterization of MBE GaAs Layers Grown at 200°C–300°C

C. E. Stutz, D. Look, K. Evans, 1990 .

Crystallized amorphous silicon for low-cost solar cells

J. Currie, D. Chung, W. Anderson, 1991 .

Two types of MeV ion beam enhanced adhesion for Au films in SiO2

M. Mendenhall, T. Vreeland, T. Tombrello, 1985 .

MeV ion damage in III–V semiconductors: Saturation and thermal annealing of strain in GaAs and GaP crystals

C. R. Wie, T. A. Tombrello, Thad Vreeland, 1986 .

Two-Qubit Bloch Sphere

C. Wie, 2020, 2003.01699.

Phonon shifts and strains in strain‐layered (Ga1−xInx)As

C. R. Wie, F. H. Dacol, Gerald Burns, 1987 .

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow‐rate modulation epitaxy

J. F. Chen, Wei-Kuo Chen, C. Wie, 1989 .

Role of cadmium vacancy-related defects in CdTe nuclear detectors

E. Eissler, Z. C. Huang, C. Wie, 1995 .

Capacitance–voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs

C. Wie, Z. Tang, 2010 .

Bloch sphere model for two-qubit pure states

C. Wie, 2014, 1403.8069.

Radiation Defect-Induced Lattice Contraction of InP

C. R. Wie, T. A. Tombrello, F. H. Dacol, 1986 .

Ionizing beam-induced adhesion enhancement and interface chemistry for AuGaAs☆

T. Tombrello, R. Housley, R. Grant, 1988 .

Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography

C. R. Wie, H M. Kim, K M. Lau, 1988, Photonics West - Lasers and Applications in Science and Engineering.

Fabrication of MSM photoconductor on porous Si using micromachined silicon mask

C. Wie, L. Z. Yu, 1992 .

InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature

G. Wicks, C. Wie, K. Xie, 1991 .

Educational Java applets in solid state materials

C. R. Wie, C. Wie, 1998 .

A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

C. R. Wie, Mun-Soo Park, Mun‐Soo Park, 2005 .

Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition

W. K. Chen, J. C. Chen, J. F. Chen, 1989, Other Conferences.

Interface traps in InP/InAlGaAs p‐n junctions by metal organic chemical vapor deposition

C. R. Wie, J. C. Chen, Z. C. Huang, 1995 .

Simulation Design and Device Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Structures with a GalnAs Emitter Spacer Layer

C. Wie, H. M. Kim, Y-W. Choi, 1991 .