H. Ohshima

发表

Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

M. Kimura, Satoru Miyashita, Kiyofumi Kitawada, 1999 .

Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors

Satoshi Takenaka, Hiroyuki Ohshima, H. Ohshima, 1992 .

Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors

A. Yamaguchi, M. Miyasaka, H. Ohshima, 1995 .

A 9.5-in. 1.3-Mpixel low-temperature poly-Si TFT-LCD fabricated by solid-phase crystallization of very thin films and an ECR-CVD gate insulator

Kenichi Takahara, Hideki Koike, Thomas W. Little, 1993 .

A 9.5 inch, 1.3 mega-pixel low temperature poly-Si TFT-LCD fabricated by SPC of very thin films and an ECR-CVD gate insulator

T. Nakazawa, H. Ohshima, T. Little, 1991, Conference Record of the 1991 International Display Research Conference.

High Performance Poly-Si TFT for LCDs

H. Ohshima, S. Morozumi, 1991 .

Polysilicon Thin Film Transistors

I. Yudasaka, H. Ohshima, 1990 .

Investigation of the low field leakage current mechanism in polysilicon TFT's

T. Brown, P. Migliorato, M. Quinn, 1998 .

Analysis of threshold voltage shift caused by bias stress in low temperature poly-Si TFTs

S. Inoue, H. Ohshima, T. Shimoda, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Mobile display technologies: Past developments, present technologies, and future opportunities

Hiroyuki Ohshima, H. Ohshima, 2014 .

Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

Tatsuya Shimoda, Satoshi Inoue, T. Shimoda, 2002 .

8.1: Invited Paper: Value of LTPS: Present and Future

Hiroyuki Ohshima, H. Ohshima, 2014 .