J. Gotoh

发表

High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

I. Suzumura, M. Ohkura, Y. Toyota, 2010, IEEE Electron Device Letters.

Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator

Y. Uraoka, M. Arif, N. Sasaki, 2020, Crystals.

Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers

T. Mishima, A. Niwa, J. Gotoh, 1999 .

Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

T. Mishima, Tao Yang, A. Niwa, 1999 .

Control of Initial Nucleation by Reducing the V/III Ratio during the Early Stages of GaN Growth

Kenji Uchida, Tao Yang, Tomoyoshi Mishima, 2000 .

Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry

Tao Yang, A. Niwa, J. Gotoh, 1998 .

Tensile and in Situ Fibre Properties of 3‐D SiC/SiC‐Based Composite Tested at Elevated Temperature in Vacuum and Air with and Without an Oxidation Protection System

T. Ishikawa, I. Davies, J. Gotoh, 2008 .

CONTROL OF THE II-VI/GAAS INTERFACE REACTION USING HYDROGEN RADICAL AND ZN/AS FLUXES

S. Nakatsuka, A. Taike, J. Gotoh, 1997 .

Development of High Temperature Materials Including CMCs for Space Application

J. Gotoh, M. Imuta, 1998 .

Fibre and interfacial properties measured in situ for a 3D woven SiC/SiC-based composite with glass sealant

T. Ishikawa, I. Davies, J. Gotoh, 1999 .

GaN/W/W-oxide metal base transistor with very large current gain and power gain

T. Mishima, P. Asbeck, K. Mochizuki, 2000 .

Low-temperature growth of ZnSe-based pseudomorphic structures by hydrogen-radical-enhanced chemical vapor deposition

H. Fujiwara, J. Hanna, H. Shirai, 1992 .

Growth of ZnSe and ZnSSe at Low Temperature with Aid of Atomic Hydrogen and Alternate Gas Supply

J. Hanna, H. Shirai, I. Shimizu, 1991 .

Tensile creep behavior of 3-D woven Si-Ti-C-O fiber/SiC-based matrix composite with glass sealant

T. Ishikawa, I. Davies, T. Ogasawara, 2000 .

Blue-green light-emitting diodes with p-ZnSSe highly doped with nitrogen grown by metalorganic molecular beam epitaxy and molecular beam epitaxy

A. Taike, J. Gotoh, M. Momose, 1994 .

Crystallographic microstructure and electrical characteristics of Au/Pt/Ti/Ni ohmic contacts on p‐type (001) ZnTe layers

K. Mochizuki, A. Terano, S. Nakatsuka, 1995 .

LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Shigetoshi Sugawa, Tetsuya Goto, Hiroshi Ikenoue, 2018, IEEE Transactions on Electron Devices.

Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application

H. Shirai, J. Gotoh, Jun-ichi Hanna Jun-ichi Hanna, 1991 .

Low temperature growth of ZnSxSe1−x alloys fabricated by hydrogen radical enhanced chemical vapor deposition in an atomic layer epitaxy mode

H. Fujiwara, H. Shirai, I. Shimizu, 1993 .

Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

Y. Uraoka, M. Arif, N. Sasaki, 2021, Journal of Electronic Materials.

Preparation and characterization of SiC/C and C/SiC/C composites using pulse chemical vapor infiltration process

S. Motojima, J. Gotoh, A. Sakai, 1996 .

Pulsed chemical vapour infiltration of SiC to three-dimensional carbon fibre preforms

J. Gotoh, K. Itoh, M. Imuta, 1992 .

Disordering of the ZnCdSe single quantum well structure by Cd diffusion

S. Nakatsuka, A. Taike, J. Gotoh, 1996 .

Creep Behavior and Modeling of SiC-Based PC Ceramic Matrix Composites with Glass Sealant in High Temperature Air

T. Ishikawa, I. Davies, J. Gotoh, 1998 .

Synthesis and polymerization of amphiphilic itaconate monomer and some properties of the polymer

Naoko Taguchi, T. Itoh, T. Uno, 2009 .

Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy

Tao Yang, J. Gotoh, K. Uchida, 1998 .