D. Kouvatsos

发表

Role of Bandgap States on the Electrical Behavior of Sequential Lateral Solidified Polycrystalline Silicon TFTs

George J. Papaioannou, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, 2008 .

Photoluminescence from nanocrystalline silicon in Si/SiO2 superlattices

A. G. Nassiopoulou, D. N. Kouvatsos, A. Nassiopoulou, 2000 .

Nickel nanoparticle deposition at room temperature for memory applications

D. Ioannou, K. Giannakopoulos, D. Tsoukalas, 2007 .

SILICON INTERSTITIAL TRAPPING IN POLYCRYSTALLINE SILICON FILMS STUDIED BY MONITORING INTERSTITIAL REACTIONS WITH UNDERLYING INSULATING FILMS

D. Tsoukalas, D. Tsoukalas, D. Kouvatsos, 1996 .

Short Channel Effects on LTPS TFT Degradation

C. Dimitriadis, A. Tsormpatzoglou, D. Moschou, 2013, Journal of Display Technology.

Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation

M. Hatalis, D. Kouvatsos, 1996 .

Fluorinated Gate Oxide Films Utilized in Polysilicon Thin Film Transistors

M. Hatalis, R. Jaccodine, D. Kouvatsos, 1992 .

Fluorine‐enhanced oxidation of polycrystalline silicon and application to thin‐film transistor fabrication

M. Hatalis, R. Jaccodine, D. Kouvatsos, 1992 .

A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

G. Papaioannou, D. Moschou, A. Voutsas, 2008 .

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

D. Moschou, A. Voutsas, D. Kouvatsos, 2008 .

Hydrogen passivation on Sequential Lateral Solidified poly-Si TFTs

M. Koutsoureli, G. Papaioannou, A. Voutsas, 2012 .

TECHNOLOGY, PERFORMANCE AND DEGRADATION CHARACTERISTICS OF SLS ELA THIN FILM TRANSISTORS

F. Farmakis, D. Moschou, A. Voutsas, 2013 .

Effect of silicon thickness on the degradation mechanisms of sequential laterally solidified polycrystalline silicon TFTs during hot-carrier stress

G. Papaioannou, A. Voutsas, L. Michalas, 2005, IEEE Electron Device Letters.

Low-Cost, High-Gain MoS2 FETs from Amorphous Low-Mobility Film Precursors

A. Regoutz, D. Davazoglou, Angelika Balliou, 2022, ACS Applied Electronic Materials.

Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films

D. Davazoglou, D. Kouvatsos, 2003 .

Characterization of thin film transistors fabricated on different sequential lateral solidified poly-silicon substrates

F. Farmakis, G. Papaioannou, A. Voutsas, 2008 .

SiO2 Film Stress—Thickness Dependence, Non‐Planar Oxidation, and Fluorine‐Related Effects

R. Jaccodine, V. Saikumar, P. J. Macfarlane, 1992 .

Interface Trap Density Reduction and Oxide Profiling for Mos Capacitors with Fluorinated Gate Oxide Dielectrics

R. Jaccodine, F. Stevie, D. Kouvatsos, 1993 .

Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2

A. Nassiopoulou, V. Ioannou-Sougleridis, D. Kouvatsos, 2003 .

Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures

A. Nassiopoulou, A. Travlos, D. Kouvatsos, 2000 .

Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates

M. Hatalis, G. Sarcona, D. Tsoukalas, 1996 .

MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

D. Tsoukalas, P. Normand, J. Stoemenos, 2000, 30th European Solid-State Device Research Conference.

Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates

M. Hatalis, J. Kanicki, A. Voutsas, 1999 .

Characterization of various low-k dielectrics for possible use in applications at temperatures below 160 °C

A. Douvas, M. Vasilopoulou, D. Davazoglou, 2005 .

Investigation of drain current transient behavior in SLS TFTs with the DLTS technique

G. Papaioannou, A. Voutsas, D. Kouvatsos, 2005 .

Study of the electronic structure of amorphous and crystallized low pressure chemically vapor deposited silicon films near the absorption threshold

D. Davazoglou, D. N. Kouvatsos, D. Davazoglou, 2002 .

Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates

Miltiadis K. Hatalis, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, 1999 .

Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and CU lift-off

D. Davazoglou, V. Ioannou-Sougleridis, D. Kouvatsos, 2003 .

Reduction of the reverse short channel effect in thick SOI MOSFET's

E. Tsoi, D. Tsoukalas, C. Tsamis, 1997, IEEE Electron Device Letters.

On the optical properties of SLS ELA polycrystalline silicon films

N. Vourdas, D. Davazoglou, D. Moschou, 2012 .

Fluorine‐Enhanced Oxidation of Silicon Effects of Fluorine on Oxide Stress and Growth Kinetics

R. J. Jaccodine, R. Jaccodine, D. Kouvatsos, 1991 .

Drain current overshoot transient in polycrystalline silicon transistors: The effect of hole generation mechanism

G. Papaioannou, A. Voutsas, D. Kouvatsos, 2006 .

Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs – Effects of gate width variation and device orientation

F. Farmakis, G. Papaioannou, A. Voutsas, 2008 .

On-state and off-state stress-induced degradation in unhydrogenated solid phase crystallized polysilicon thin film transistors

Dimitrios N. Kouvatsos, D. Kouvatsos, 2002, Microelectron. Reliab..

Short channel effects in double gate polycrystalline silicon SLS ELA TFTs

I. Pappas, A. T. Voutsas, D. C. Moschou, 2012, 2012 28th International Conference on Microelectronics Proceedings.

Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

George J. Papaioannou, Despina Moschou, Dimitrios N. Kouvatsos, 2007 .

Front and Back Channel Properties of Asymmetrical Double-Gate Polysilicon TFTs

George J. Papaioannou, Despina Moschou, Dimitrios N. Kouvatsos, 2006, ECS Transactions.

High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane

Miltiadis K. Hatalis, Apostolos T. Voutsas, D. N. Kouvatsos, 1996 .

Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing

A. G. Nassiopoulou, V. Ioannou-Sougleridis, D. N. Kouvatsos, 2003 .

Point Defect Injection Kinetics by N 2 O Oxidation of Silicon

C. Tsamis, D. Tsoukalas, D. Kouvatsos, 1997 .

On the importance of the Vg, max-Vth parameter on LTPS TFT stressing behavior

Dimitrios N. Kouvatsos, Apostolos T. Voutsas, Giannis P. Kontogiannopoulos, 2010, Microelectron. Reliab..

An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors

George J. Papaioannou, Dimitrios N. Kouvatsos, Apostolos T. Voutsas, 2007, Microelectron. Reliab..

Width dependent degradation of polycrystalline silicon TFTs

F. Farmakis, G. Papaioannou, A. Voutsas, 2008, 2008 26th International Conference on Microelectronics.

Hot‐wire vapor deposition of amorphous MoS2 thin films

D. Barreca, A. Gasparotto, A. Kontos, 2015 .

A Practical Model Assessing the Degradation of Polycrystalline Silicon TFTs Due to DC Electrical Stress

F. Farmakis, G. Papaioannou, A. Voutsas, 2010, IEEE Transactions on Electron Devices.