Luwei Qi

Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

Dehai Zhang, Jin Meng, Jingtao Zhou, 2020 .

The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material

Zhi Jin, Dehai Zhang, Jin Meng, 2020, Micromachines.

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

Zhi Jin, Dehai Zhang, Jin Meng, 2020 .

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process*

Tianchun Ye, Jiang Yan, Huilong Zhu, 2017 .

TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band

W. Ding, Jingtao Zhou, Luwei Qi, 2021, Electronics.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations*

Tianchun Ye, Yefeng Xu, Junfeng Li, 2016 .