J. Liberis

发表

Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

H. Morkoç, V. Avrutin, Ü. Özgür, 2020 .

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2018 .

Hot-phonon lifetime in Al 0.23 Ga 0.77 N/GaN channels

N. Szabó, P. Sakalas, M. Ramonas, 2014 .

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels

N. Szabó, P. Sakalas, M. Ramonas, 2014 .

Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

H. Morkoç, V. Avrutin, Ü. Özgür, 2012 .

InAlN‐barrier HFETs with GaN and InGaN channels

H. Morkoç, J. Xie, J. Leach, 2009 .

Hot-phonon temperature and lifetime in biased 4H-SiC

L. Eastman, H. Cha, M. Spencer, 2004 .

Microwave noise in AlGaN/GaN channels

A. Matulionis, J. Liberis, 2004 .

Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

L. Eastman, X. Chen, Y. Sun, 2005 .

Hot phonons in Si-doped GaN

D. Jena, H. Xing, N. Goel, 2006 .

Nitride-based high electron mobility transistors with a GaN spacer

S. Denbaars, T. Palacios, S. Keller, 2006 .

Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2 channels

M. Först, H. Kurz, M. Lemme, 2006 .

Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

P. Sakalas, A. Matulionis, J. Liberis, 1993 .

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Comparative analysis of hot‐electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels

L. Eastman, J. Shealy, X. Chen, 2005 .

High-Field Transport in Nitride Channels: a Hot-Phonon Bottleneck

L. Eastman, A. Matulionis, J. Liberis, 2006 .

DRIFT VELOCITYMEASUREMENT AND HOT ELECTRON CAPTURE IN AlGaN / AlN /

A. Matulionis, O. Kiprijanovič, J. Liberis, 2012 .

DRIFT VELOCITY MEASUREMENT AND HOT ELECTRON CAPTURE IN AlGaN/AlN/GaN

A. Matulionis, O. Kiprijanovič, J. Liberis, 2005 .

Hot-phonon effect on power dissipation in a biasedAlxGa1−xN∕AlN∕GaNchannel

Lester F. Eastman, M. Ramonas, J. Liberis, 2005 .

Hot-electron energy relaxation time in Ga-doped ZnO films

H. Morkoç, V. Avrutin, Ü. Özgür, 2015 .

Electron energy relaxation in wurtzite ZnO and GaN

H. Morkoç, V. Avrutin, N. Izyumskaya, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

ELECTRIC FIELD STRENGTH AND TEMPERATURE DEPENDENCE OF CONDUCTION RELAXATION IN AlGaN/AlN/GaN 2D ELECTRON GAS

O. Kiprijanovič, J. Liberis, L. Ardaravičius, 2009 .

The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN

O. Kiprijanovič, J. Liberis, L. Ardaravičius, 2008 .

Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

M. Ramonas, A. Matulionis, J. Liberis, 2007, 2007 International Semiconductor Device Research Symposium.

Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .

Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

M. Ramonas, A. Matulionis, J. Liberis, 2008 .

Electron drift velocity in AlGaN/GaN channel at high electric fields

Lester F. Eastman, James R. Shealy, M. Ramonas, 2003 .

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

H. Morkoç, V. Avrutin, Ü. Özgür, 2019, Journal of Applied Physics.

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

O. Kiprijanovič, J. Liberis, L. Ardaravičius, 2017 .

Hot-electron noise spectroscopy for HFET channels

H. Morkoç, V. Avrutin, Ü. Özgür, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Hot-electron noise and energy relaxation in wurtzite ZnO

H. Morkoç, V. Avrutin, A. Matulionis, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Electron Velocity Enhancement in Polarization-doped AlGaN

O. Kiprijanovič, J. Liberis, L. Ardaravičius, 2013 .

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

H. Morkoç, J. Leach, A. Matulionis, 2011 .

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Fan Zhang, Hadis Morkoç, V. Avrutin, 2013 .

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2009 .

Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

O. Kiprijanovič, J. Liberis, L. Ardaravičius, 2011 .

Fast and Ultrafast Processes in AlGaN/GaN Channels

D. Pavlidis, L. Eastman, J. Shealy, 2002 .

Transverse tunnelling time constant estimated from hot-electron noise in GaAs-based heterostructure

V. Ustinov, P. Kop’ev, A. Matulionis, 1996 .

High-field electron transport in doped ZnO

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

Microwave noise in epitaxial graphene on SiC

J. Y. Kwak, M. Spencer, H. Alsalman, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

High frequency noise of epitaxial graphene grown on sapphire

J. Y. Kwak, L. Eastman, M. Spencer, 2013 .

Electron-gas cooling studied by measurements of noise temperature

G. Valušis, S. Ašmontas, J. Liberis, 1992 .

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

H. Morkoç, V. Avrutin, Ü. Özgür, 2021, Applied Physics Letters.

LETTER TO THE EDITOR: Hot-electron energy relaxation time in AlGaN/GaN

J. Smart, M. Ramonas, A. Matulionis, 2002 .

Hot-electron noise and diffusion in AlGaAs/GaAs

M. Leys, A. Matulionis, J. Liberis, 1994 .

Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K

L. Eastman, J. Shealy, J. Smart, 2002 .

Hot-electron velocity fluctuations in two-dimensional electron gas channels ☆

A. Matulionis, J. Liberis, V. Aninkevičius, 2000 .

HOT-ELECTRON ENERGY RELAXATION, NOISE, AND LATTICE STRAIN IN INGAAS QUANTUM WELL CHANNELS

K. Heime, H. Hartnagel, A. Matulionis, 1999 .

HOT-ELECTRON DIFFUSION AND VELOCITY FLUCTUATIONS IN QUANTUM WELL STRUCTURES

V. Ustinov, P. Koenraad, J. Wolter, 1996 .

Experiments on hot electron noise in semiconductor materials for high-speed devices

P. Sakalas, A. Matulionis, J. Liberis, 1994 .

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

A. Matulionis, J. Liberis, I. Matulioniene, 2005 .

Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Hadis Morkoç, Jacob H. Leach, J. Liberis, 2011 .

Hot-electron transport in 4H-SiC

L. Eastman, H. Cha, M. Spencer, 2005 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

NOISE IN SHORT n+-n-n+ GaAs DIODES

P. Sakalas, J. Liberis, V. Bareikis, 1986 .

Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n+-n-n+ Structures of GaAs

P. Sakalas, J. Požela, A. Matulionis, 1986 .

Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis

Lester F. Eastman, James R. Shealy, M. Ramonas, 2003 .

1⧸f-noise in the hall voltage of epitaxial n-GaAs

L. Ren, J. Liberis, L. Ren, 1993 .

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

H. Morkoç, J. Leach, M. Ramonas, 2009 .

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

J. Leach, A. Cerskus, J. Kundrotas, 2011 .

Self-heating and microwave noise in AlGaN/GaN

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .