V. Zemlyakov

发表

Detection of terahertz radiation by array of integrated field-effect transistors with floating electrodes

N. Maleev, V. Ustinov, I. Khmyrova, 2016, 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.

Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors

M. Shur, N. Maleev, V. Ustinov, 2015 .

Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors

N. Maleev, V. Gavrilenko, V. Popov, 2014 .

AlN/GaN heterostructures for normally-off transistors

K. K. Abgaryan, Ya. M. Parnes, T. Malin, 2017 .

Integrated sensor array for analysis of multicomponent gas mixtures

E. Verona, V. Anisimkin, R. Kryshtal’, 1998 .

Integrated array of SAW sensors for gas analysis

E. Verona, V. Anisimkin, V. I. Fedosov, 1998, 1998 IEEE Ultrasonics Symposium. Proceedings (Cat. No. 98CH36102).

Integrated array of gas sensors

E. Verona, V. Anisimkin, A. Medved’, 1998 .

Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate

V. Kapaev, V. Zemlyakov, V. Egorkin, 2020 .

Developing of normally-off p-GaN gate HEMT

V. Kapaev, A. V. Sakharov, A. F. Tsatsulnikov, 2019, Journal of Physics: Conference Series.

Normally off transistors based on in situ passivated AlN/GaN heterostructures

Ya. M. Parnes, T. Malin, K. Zhuravlev, 2016 .

Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures

V. Bespalov, V. Kapaev, V. Zemlyakov, 2021, Semiconductors.

Thermostable Mo-based electron lithography marks

V. Zemlyakov, V. Egorkin, A. Zaitsev, 2018, 2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).

Optimization of Ohmic contact fabrication technology to GaN-based heterostructures

V. Zemlyakov, V. Egorkin, A. Emelianov, 2017, 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).

Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy

M. V. Rzheutski, A. Semenov, S. Troshkov, 2018 .

Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

A. S. Puzanov, S. Khazanova, E. A. Tarasova, 2022, Semiconductors.

Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamond

A. A. Altukhov, A. V. Mitenkin, A. Ratnikova, 2011 .

Effect of thermal stabilization on surface traps in the HEMT-transistors based on AlGaN / SiC

S. Tarasov, V. Tikhomirov, A. Evseenkov, 2017 .

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

M. N. Mizerov, A. V. Sakharov, W. V. Lundin, 2016 .

Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate

V. I. Gavrilenko, V. V. Popov, D. V. Fateev, 2010 .

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

A. Egorov, P. Brunkov, B. Ber, 2011 .

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

T. Malin, K. Zhuravlev, B. Ber, 2019, Technical Physics Letters.

An array of integrated on a chip GaAs/InGaAs/AlGaAs-field-effect transistors with floating electrodes for detection of terahertz radiation

N. Maleev, V. Ustinov, I. Khmyrova, 2015, 2015 International Topical Meeting on Microwave Photonics (MWP).

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

A. G. Kuzmenkov, A. Gladyshev, N. Maleev, 2011 .

AlN/GaN heterostructures for normally-off transistors

K. K. Abgaryan, T. Malin, K. Zhuravlev, 2017, Semiconductors (Woodbury, N.Y.).

Terahertz detection in a slit-grating-gate field-effect-transistor structure

N. Maleev, S. Shapoval, V. Gavrilenko, 2011, 1110.1797.