Juntao Li

Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter

Zhaoji Li, Gang Dai, Xiaorong Luo, 2018, IEEE Transactions on Power Electronics.

Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

Yan Wang, Gang Dai, Ruifeng Yue, 2016, IEEE Transactions on Electron Devices.

200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage

Zhe Xu, Juntao Li, Yang Zhou, 2019, Electronics Letters.

A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

Yan Wang, Zhiping Yu, Gang Dai, 2018, IEEE Transactions on Power Electronics.