T. S. Noggle

Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

D. M. Mills, C. W. White, D. Mills, 1983 .

Synchrotron x-ray diffraction study of silicon during pulsed laser annealing

D. M. Mills, C. W. White, D. Mills, 1982 .

Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Stephen J. Pennycook, R. A. Zuhr, Bill R. Appleton, 1987 .