S. Muller

High endurance strategies for hafnium oxide based ferroelectric field effect transistor

M. Trentzsch, S. Flachowsky, H. Mulaosmanovic, 2016, 2016 16th Non-Volatile Memory Technology Symposium (NVMTS).

HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention

R. Hoffmann, M. Trentzsch, S. Slesazeck, 2012, 2012 4th IEEE International Memory Workshop.

Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

S. Flachowsky, H. Mulaosmanovic, S. Slesazeck, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).