Yan Gao

4H-SiC BJT Characterization at High Current High Voltage

Zhong Du, Alex Q. Huang, Anant K. Agarwal, 2006 .

Analysis of Operational Degradation of SIC BJT Characteristics

Qingchun Zhang, A. Agarwal, A. Huang, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

S. Krishnaswami, J. Richmond, A. Agarwal, 2006, IEEE Transactions on Industry Applications.

Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT

Qingchun Zhang, A. Agarwal, A. Huang, 2008, IEEE Transactions on Electron Devices.