Yuichiro Mitani

发表

Feed-back control systems for cabin noise reduction; design study on basic panel element

Sadao Akishita, Yuichiro Mitani, 2000 .

Extracting Physically Unclonable Function From Spin Transfer Switching Characteristics in Magnetic Tunnel Junctions

Takao Marukame, Yuichiro Mitani, Tetsufumi Tanamoto, 2014, IEEE Transactions on Magnetics.

Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

Kazuya Matsuzawa, Yuichiro Mitani, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Mitsuhiro Tomita, Masamichi Suzuki, Kikuo Yamabe, 2017, Microelectron. Reliab..

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Masakazu Goto, Kikuo Yamabe, Yuichiro Mitani, 2013, Microelectron. Reliab..

Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology pdf

Takao Marukame, Satoshi Takaya, Shinobu Fujita, 2017, ArXiv.

Artificial neuron operations and spike-timing-dependent plasticity (STDP) using memristive devices for brain-inspired computing

Takao Marukame, Yoshifumi Nishi, Reika Ichihara, 2017 .

Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation

Harumi Seki, Yuichiro Mitani, Yasushi Nakasaki, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation

Tetsuya Asai, Alexandre Schmid, Takao Marukame, 2017, IEEE Transactions on Circuits and Systems II: Express Briefs.

Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits

Masamichi Suzuki, Yuichiro Mitani, Atsuhiro Kinoshita, 2013, Proceedings of 2013 International Conference on IC Design & Technology (ICICDT).

Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component

Yuichiro Mitani, K. Matsuzawa, Shigeto Fukatsu, 2012, 2012 IEEE International Conference on IC Design & Technology.

Study on mechanism of thermal curing in ultra-thin gate dielectrics

Yuichiro Mitani, Yasushi Nakasaki, Yusuke Higashi, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Adaptive 2DOF control of sound transmission through plate by MIMO system

Sadao Akishita, Yuichiro Mitani, 1999 .

Enhancement of VTH Degradation under NBT Stress due to Hole Capturing

A. Toriumi, Yuichiro Mitani, Hideki Satake, 2003 .

Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Akira Toriumi, Yuichiro Mitani, Yasushi Nakasaki, 2003 .

Re-consideration of influence of silicon wafer surface orientation on gate oxide reliability from TDDB statistics point of view

Akira Toriumi, Yuichiro Mitani, 2010, 2010 IEEE International Reliability Physics Symposium.

Investigation of Switching-Induced Local Defects in Oxide-Based CBRAM Using Expanded Analytical Model of TDDB

Shosuke Fujii, Reika Ichihara, Marina Yamaguchi, 2019, IEEE Transactions on Electron Devices.

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Kazuya Matsuzawa, Yuichiro Mitani, Tatsuya Ohguro, 2014, IEEE Transactions on Electron Devices.

Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

Akira Toriumi, Hitoshi Itoh, Yuichiro Mitani, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Experimental study on origin of VTH variability under NBT stress

Akira Toriumi, Yuichiro Mitani, 2011, 2011 International Reliability Physics Symposium.

A Study of the Effect of Deuterium on Stress-Induced Leakage Current

Hitoshi Ito, Akira Toriumi, Yuichiro Mitani, 2000 .

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-k Metal–Oxide–Semiconductor Field-Effect Transistors

Yuichiro Mitani, Shigeto Fukatsu, Izumi Hirano, 2010 .

New dual gate doping process using in-situ boron doped-Si for deep sub-/spl mu/m CMOS device

Ichiro Mizushima, Yuichiro Mitani, Yoshiaki Toyoshima, 1993, Proceedings of IEEE International Electron Devices Meeting.

Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

Yuichiro Mitani, Jiezhi Chen, Yusuke Higashi, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities

Hiroki Noguchi, Yuichiro Mitani, Tetsufumi Tanamoto, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Yuichiro Mitani, Hideki Satake, Y. Mitani, 2008 .