S. A. Safvi

发表

Effect of reactor geometry and growth parameters on the uniformity and material properties of {GaN}/{sapphire} grown by hydride vapor-phase epitaxy

Thomas F. Kuech, Richard J. Matyi, R. Matyi, 1997 .

The dependence of catalytic carbon filament growth kinetics upon gas phase carbon activity

Carl R.F. Lund, C. Lund, S. A. Safvi, 1991 .

Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

T. Kuech, N. Perkins, S. A. Safvi, 1996 .

GAS-Phase Decomposition Kinetics of MOVPE Precursors in a Counterflow Jet Reactor

T. J. Mountziaris, S. A. Safvi, 1992 .

Photoreflectance Study of the Long‐Term Stability of Various Surface Chemical Treatments on (001) n‐GaAs

T. Kuech, J. Geisz, S. A. Safvi, 1997 .

A new reactor for purely homogeneous kinetic studies of endothermic reactions

T. J. Mountziaris, S. A. Safvi, 1994 .

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Rong Zhang, T. Kuech, D. Hansen, 1998 .

A Mass Spectroscopic Study of the Vapor Phase Thermal Decomposition of Trimethylamine

T. Kuech, D. Games, D. Saulys, 1997 .

High Temperature Gas Phases Reactions Of Trimethylgallium with Ammonia and Trimethylamine

T. Kuech, S. A. Safvi, A. Thon, 1996 .

A modeling study of GaN growth by MOVPE

T. Kuech, M. Tischler, J. Redwing, 1995 .

Spatial resolution of localized photoluminescence by near-field scanning optical microscopy

T. Kuech, Jia Liu, S. A. Safvi, 1997 .

GaN Growth by Metallorganic Vapor Phase Epitaxy A Comparison of Modeling and Experimental Measurements

T. Kuech, M. Tischler, J. Redwing, 1997 .

Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

T. Kuech, N. Perkins, S. A. Safvi, 1996 .