Ravi Shivaraman

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

Anurag Tyagi, James S. Speck, Shuji Nakamura, 2011 .

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

James S. Speck, J. Speck, Yuh-Renn Wu, 2012 .

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

James S. Speck, Tsung-Jui Yang, J. Speck, 2014 .

Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett.98, 191903 (2011)]

Anurag Tyagi, James S. Speck, Shuji Nakamura, 2011 .