T. Letavic

High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors

E. Arnold, T. Letavic, H. Bhimnathwala, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

Theodore Letavic, Satyendranath Mukherjee, Steven L. Merchant, 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

Influence of drift region on the 1/f noise in LDMOS

S. Sirohi, V. Subramanian, A. A. Dikshit, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

High-field electron velocity in thin SOI films

E. Arnold, T. Letavic, R. Aquino, 1997, 1997 IEEE International SOI Conference Proceedings.