A. Limanov

发表

Control of the structure in zone-melted silicon films on amorphous substrates

E. I. Givargizov, A. Limanov, 1983 .

Single-Axis Projection Scheme for Conducting Sequential Lateral Solidifica-tion of Si Films for Large-Area Electronics

A. Limanov, V. Borisov, 2001 .

Characterization & Analysis of Sub-Grain Boundaries in Sequential Lateral Solidification Processed SOI Films

J. Im, A. Limanov, M. A. Crowder, 2001 .

Sub-grain Boundary Spacing in Directionally Crystallized Si Films Obtained via Sequential Lateral Solidification

James S. Im, A. B. Limanov, J. Im, 2000 .

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

M. G. Kane, James S. Im, P. C. van der Wilt, 2006 .

100‐MHz CMOS circuits directly fabricated on plastic using sequential laterally solidified silicon

M. G. Kane, James S. Im, Arthur H. Firester, 2007 .

Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

S. Gates, D. Edelstein, I. Kymissis, 2014 .

Flash-Lamp-Induced Lateral Solidification of Thin Si Films

A. Chitu, U. Chung, J. Im, 2011 .

Mixed-phase solidification of thin Si films on SiO2

A. Chitu, U. Chung, K. Ohmori, 2010 .

On The Mechanism of Nucleation in Pulsed-laser Quenched Si Films on SiO 2

A. Chitu, U. Chung, J. Im, 2010 .

Controlled super lateral growth enhancement of single pulse laser irradiation by heat-retaining layer

P. C. van der Wilt, A. Chitu, J. Im, 2005, 2005 IEEE LEOS Annual Meeting Conference Proceedings.

100 MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic

P. C. van der Wilt, M. Kane, A. Firester, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Artificial epitaxy (graphoepitaxy) of semiconductors

E. I. Givargizov, L. Zadorozhnaya, A. Limanov, 1983 .

Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

J. J. Wang, A. Chitu, J. Im, 2015 .

Observation of Superheating of Si at the Si/SiO2 Interface in Pulsed-laser irradiated Si Thin Films

J. Im, A. Limanov, Ying Wang, 2015 .

Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization

E. I. Givargizov, A. Limanov, V. A. Loukin, 1995 .

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO 2

A. Chitu, J. Im, A. Limanov, 2015 .

Nucleation-Initiated Solidification of Thin Si Films

U. Chung, J. Im, A. Limanov, 2006 .

Excimer-Laser-Induced Melting and Solidification of PECVD a-Si films under Partial-Melting Conditions

M. Thompson, A. Chitu, U. Chung, 2011 .

A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates

A. B. Limanov, P. C. van der Wilt, B. A. Turk, 2006, SPIE LASE.

Artificial Epitaxy: New Developments and New Mechanisms

E. I. Givargizov, A. Limanov, 1988 .

Artificial epitaxy (graphoepitaxy) as an approach to the formation of SOI

E. I. Givargizov, A. Limanov, 1988 .

Effect of Film Thickness Variation on (100)-Surface Texturing of MPS Processed Polycrystalline Si Films

A. Chitu, J. Im, A. Limanov, 2012 .

100W collinear optical parametric amplifier pumped by the second harmonic of a picosecond Yb-fiber laser

P. Hering, V. Gapontsev, Jimyung Kim, 2022, LASE.

Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

A. Chitu, U. Chung, J. Im, 2012 .

P‐59: Thin‐beam Crystallization Method for Fabrication of LTPS

D. Knowles, Ji-Yong Park, A. Herkommer, 2005 .