R. Erni

发表

A Strain-Driven Morphotropic Phase Boundary in BiFeO3

R. Ramesh, C. H. Wang, J. X. Zhang, 2009, Science.

An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling

D. Caimi, L. Czornomaz, J. Fompeyrine, 2012, 2012 International Electron Devices Meeting.

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

D. Caimi, L. Czornomaz, J. Fompeyrine, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes

Christian Kisielowski, Nathan F. Gardner, Joerg R. Jinschek, 2006 .