Kazuhide Kumakura

发表

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Toshiki Makimoto, Atsushi Nishikawa, Tetsuya Akasaka, 2006 .

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hideki Hasegawa, Eiichi Sano, Toshiki Makimoto, 2004 .

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2018 .

High-temperature characteristics up to 590 °c of a pnp AlGaN/GaN heterojunction bipolar transistor

Toshiki Makimoto, K. Kumakura, T. Makimōto, 2009 .

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Naoki Kobayashi, Toshiki Makimoto, K. Kumakura, 2003 .

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, Yoshiharu Yamauchi, K. Kumakura, 2004 .

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Naoki Kobayashi, Toshiki Makimoto, Kazuhide Kumakura, 2001 .

Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy

Hideki Hasegawa, Takashi Fukui, Junichi Motohisa, 1995 .

Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy

Takashi Fukui, Junichi Motohisa, T. Fukui, 1997 .

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique

Hideki Yamamoto, Masanobu Hiroki, Hideki Yamamoto, 2017 .

Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

Naoki Kobayashi, Toshiki Makimoto, Kazuhide Kumakura, 2001 .

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2007 .