Wei-Min Chan

发表

13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications

Sreedhar Natarajan, Shien-Yang Wu, Hung-Jen Liao, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications

Jonathan Chang, Hung-Jen Liao, Ching-Wei Wu, 2016, 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits).

A 40nm fully functional SRAM with BL swing and WL pulse measurement scheme for eliminating a need for additional sensing tolerance margins

Meng-Fan Chang, Ping Wang, Hiroyuki Yamauchi, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications

Hidehiro Fujiwara, Jonathan Chang, Shien-Yang Wu, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

A block-level optimization of comprehensive thermal-aware power management for SoC integration in nano-scale CMOS technology

Herming Chiueh, Wei-Min Chan, 2005, 48th Midwest Symposium on Circuits and Systems, 2005..

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications

Min Cao, Sreedhar Natarajan, Hank Cheng, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM

Meng-Fan Chang, Ping Wang, Hiroyuki Yamauchi, 2012, IEEE Journal of Solid-State Circuits.

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Tsung-Yung Jonathan Chang, Hung-Jen Liao, 2021, IEEE Journal of Solid-State Circuits.

A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications

Jonathan Chang, Shien-Yang Wu, Hung-Jen Liao, 2014, IEEE Journal of Solid-State Circuits.