S. Geissler

A thermally activated gate current in off-state PMOSFETs

Ronald J. Bolam, E. Adler, S. Geissler, 1991, 29th Annual Proceedings Reliability Physics 1991.

Semiconductor process and structural optimization of shallow trench isolation-defined and polysilicon-bound source/drain diodes for ESD networks

R. Gauthier, J. Pekarik, J. Pekarik, 1998, Electrical Overstress/ Electrostatic Discharge Symposium Proceedings. 1998 (Cat. No.98TH8347).

A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices

Steven H. Voldman, S. Geissler, J. Johnson, 1991, International Electron Devices Meeting 1991 [Technical Digest].