V. K. Mathews

发表

A highly manufacturable trench isolation process for deep submicron DRAMs

P. Fazan, P. C. Fazan, V. K. Mathews, 1993, Proceedings of IEEE International Electron Devices Meeting.

Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation

G. Lo, D. Kwong, P. Fazan, 1993 .

Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon

G. Lo, D. Kwong, P. Fazan, 1993, IEEE Electron Device Letters.

Ultrathin oxide-nitride dielectrics for rugged stacked DRAM capacitors

P. Fazan, A. Ditali, V. K. Mathews, 1992, IEEE Electron Device Letters.

Dynamic-stress-induced dielectric breakdown in ultrathin nitride/oxide stacked films deposited on rugged polysilicon

G. Lo, D. Kwong, P. Fazan, 1992, IEEE Electron Device Letters.

Trapping, conduction, and dielectric breakdown in Si/sub 3/N/sub 4/ films on as-deposition rugged polysilicon

P. Fazan, V. K. Mathews, H. C. Chan, 1991, IEEE Electron Device Letters.

Trapping , Conduction, and Dielectric Breakdown in Si N, Films on As-Deposited Rugged Poly silicon

P. Fazan, V. K. Mathews, H. C. Chan, 1991 .

Effects of surface pretreatment of polysilicon electrode prior to Si/sub 3/N/sub 4/ deposition on the electrical characteristics of Si/sub 3/N/sub 4/ dielectric films

D. Kwong, P. Fazan, A. Joshi, 1994 .

Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

P. Fazan, V. K. Mathews, R. Thakur, 1994 .

Influence of Surface Preparation Prior to Thermal Nitridation on the Electrical Characteristics of Silicon Nitride Films Deposited on Polycrystalline Silicon Films

P. Fazan, A. Ditali, V. K. Mathews, 1992 .

Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors)

P. Fazan, R. Maddox, V. K. Mathews, 1992, IEEE Electron Device Letters.

Physical and electrical characterization of poly buffered LOCOS isolation process for sub 0.5 mu m ULSI technology

P. Fazan, R. Maddox, V. K. Mathews, 1993 .

Constitutive Law for Calculating Plastic Deformations During CZ Silicon Crystal Growth

O. Dillon, T. Gross, R. J. Angelis, 1990 .

Dynamic strain aging in Czochralski-grown silicon single crystals

K. Okazaki, T. Gross, R. J. Angelis, 1989 .

High temperature (900 – 1300°C) mechanical behaviour of dendritic web grown silicon ribbons: - strain rate and temperature dependence of the yield stress

T. Gross, V. K. Mathews, 1987 .

Tensile properties of Czochralski grown silicon from 900–1200°C

T. Gross, V. K. Mathews, 1986 .

A case of lingual thyroid with hypothyroidism.

P. Kandasami, V. K. Mathews, 1985, The Medical journal of Malaysia.

Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's

G. Lo, D. Kwong, P. Fazan, 1992, IEEE Electron Device Letters.

Hot-carrier-induced degradation of gate dielectrics grown in nitrous oxide under accelerated aging

A. Ditali, P. Fazan, P. Fazan, 1992, IEEE Electron Device Letters.

Effect of Processing Conditions on the Surface Morphology of thin Polysilicon Films Used for Dram Cell Capacitors

V. K. Mathews, 1992 .