Y. Hiroshima

Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

S. Inoue, R. Ishihara, V. Rana, 2005, IEEE Transactions on Electron Devices.

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

J. W. Metselaar, Tatsuya Shimoda, Ryoichi Ishihara, 2005 .

Single-Grain Si TFTs and Circuits Inside Location-Controlled Grains Fabricated Using a Capping Layer of $\hbox{SiO}_{2}$

S. Inoue, R. Ishihara, V. Rana, 2007, IEEE Transactions on Electron Devices.

Single-grain Si thin-film transistors for analog and RF circuit applications

C.I.M. Beenakker, S. Inoue, M. Danesh, 2007, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference.