Tommaso Vali

Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses

Fernanda Irrera, Ivan Piccoli, Giuseppina Puzzilli, 2009, Microelectron. Reliab..

Selective, slow convergence in a programmable flash memory device

Tommaso Vali, Michele Incarnati, Giovanni Santin, 2006 .

A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology

Massimo Rossini, Tommaso Vali, Luca De Santis, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Unlocking for chip protection register.

Tommaso Vali, Pietro Piersimoni, Pasquale Pistilli, 2003 .

A Neural Network implemented on NAND memory

Fernanda Irrera, Tommaso Vali, Luca De Santis, 2020, 2020 IEEE International Memory Workshop (IMW).

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

Hyunseok Lee, Hoon Choi, Massimo Rossini, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

Massimo Rossini, Tommaso Vali, Luca De Santis, 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

Full-wave modeling of inductive coupling links for low-power 3D system integration

Tommaso Vali, Giulio Antonini, Daniele Romano, 2013, 2013 IEEE International Symposium on Electromagnetic Compatibility.