S. Mankefors

发表

Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Jinghua Guo, A. Agui, J. Kanski, 2000 .

Revised charge redistribution on semiconductor III-V (110) surfaces

P. Nilsson, S. Mankefors, 2001 .

Thickness-dependent valence-band photoemission from thin InAs and GaAs films

L. Ilver, J. Kanski, U. Södervall, 2001 .

A theoretical investigation of ideal III–V (211) surfaces

S. Mankefors, 2000 .

Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III–V (1̄1̄1̄) surfaces

J. Kanski, P. Nilsson, S. Mankefors, 1999 .

Theoretical investigations of As overlayers on InP(110) surfaces

J. Kanski, P. Nilsson, K. Karlsson, 1997 .

Ab initio investigation of the electronic and geometric structure of zincblende Ga1-xTlxAs alloys

S. Svensson, S. Mankefors, S Mankefors, 2000 .

Hydrogenation of As/Ge(100) 2×1: a theoretical study of the surface electronic structure

J. Kanski, P. Nilsson, S. Mankefors, 1999 .

An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction : theory and experiment

E. Lundgren, P. Nilsson, S. Mankefors, 1999 .

Local ionicity - an alternative definition for ab initio calculations

P. Nilsson, S. Mankefors, 2000 .

Ab initio study of the Ge(211) and Si(211)bulk terminated surfaces

S. Mankefors, 1999 .

Molecular alligator clips: a theoretical study of adsorption of S, Se and S–H on Au(111)

A. Grigoriev, G. Wendin, S. Mankefors, 2003 .

Scheme for calculating the electronic structure of polar surfaces

S. Mankefors, 1999 .

Reversed trend in polarity for alkaline earth oxides - an ab initio study

S. Mankefors, 2000 .