C. Biasotto

Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition

J. Swart, J. A. Diniz, E. Rodríguez, 2006 .

DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

C. Biasotto, 2011 .

Integration of laser-annealed junctions in a low-temperature high-k metal-gate MISFET

L. Nanver, V. Jovanovic, S. Milosavljević, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Integration of MOSFETs with SiGe dots as stressor material

L. Nanver, H. Kosina, O. Schmidt, 2011 .

Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

L. Nanver, Y. Civale, V. Jovanovic, 2010 .

Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions

L. Nanver, V. Jovanovic, T. Scholtes, 2011 .

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

L. Nanver, D. Grützmacher, V. Jovanovic, 2011, Nano letters.

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

Stanislav A. Moshkalev, José Alexandre Diniz, S. Moshkalev, 2008 .