G. Turban

Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O2/tetraethoxysilane plasmas

Antoine Goullet, G. Turban, C. Vallée, 2000 .

Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane

Angeliki Tserepi, Evangelos Gogolides, George P. Patsis, 2003 .

SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

C. Cardinaud, G. Turban, Ch. Cardinaud, 2000 .

Electron-shading characterization in a HDP contact etching process using a patterned CHARM wafer

G. Reimbold, M. Haond, W. Lukaszek, 2000, 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479).

Investigation of Si and Ge etching mechanisms in radiofrequency CF2-O2 plasma based on surface reactivities

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .

Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor

Christine Charles, Antoine Goullet, Christophe Cardinaud, 1993 .

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

A. Barreau, Karl Pfeiffer, F. Gaboriau, 2000 .

Comparison of etching processes of silicon and germanium in SF6–O2 radio‐frequency plasma

C. Cardinaud, G. Turban, Ch. Cardinaud, 1995 .