X. W. Wang
发表
20–80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63mV/dec
M. J. Manfra,
P. D. Ye,
M. Manfra,
2012,
2012 International Electron Devices Meeting.
M. J. Manfra,
P. D. Ye,
M. Manfra,
2012,
2012 International Electron Devices Meeting.