F. Jahnel

Method for the measurement of the lateral dose distribution of dopants at implantation or diffusion mask edges (‘‘lateral SIMS’’)

R. von Criegern, F. Jahnel, M. Bianco, 1994 .

Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

G. Prinke, H. Ryssel, J. Biersack, 1981 .

High concentration effects of ion implanted boron in silicon

K. Haberger, H. Ryssel, H. Ryssel, 1980 .