Marguerite Laügt

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Pierre Gibart, Bernard Beaumont, Eric Feltin, 2001 .

Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1999 .

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Pierre Gibart, Bernard Beaumont, P. Vennégués, 2000 .

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

Nicolas Grandjean, Mathieu Leroux, Benjamin Damilano, 1999 .

Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

Pierre Lefebvre, Nicolas Grandjean, Bernard Gil, 1998 .

Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition

P. Ruterana, Edith Bellet-Amalric, P. Ruterana, 2001 .

Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors

Marc Ilegems, Eric Feltin, Nicolas Grandjean, 2005 .