M.H.M. Reddy

Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices

L. Coldren, D. Feezell, D. Buell, 2003 .

Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs

L. Coldren, D. Feezell, D. Buell, 2003 .

Lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb oxide for current confinement in InP-based long wavelength VCSELs

L. Coldren, D. Buell, T. Asano, 2002, International Conference on Molecular Bean Epitaxy.