Katsuaki Saito

1800A/3.3kV IGBT Module using Advanced Trench HiGT Structure and Module Design Optimization

Takayuki Kushima, Katsunori Azuma, Yasuhiro Nemoto, 2014 .

Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Mutsuhiro Mori, Taiga Arai, So Watanabe, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

nHPD² (next High Power Density Dual) with next generation chip suitable for low internal inductance package

Katsunori Azuma, Katsuaki Saito, Daisuke Kawase, 2016 .

Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

Alberto Castellazzi, Katsuaki Saito, Abdallah Hussein, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

Direct-water-cooled next High Power Density Dual (nHPD2) considering inverter layout

Mutsuhiro Mori, Katsuaki Saito, Daisuke Kawase, 2016 .

High voltage module with low internal inductance for next chip generation - next High Power Density Dual (nHPD2)

Katsuaki Saito, Daisuke Kawase, Keisuke Horiuchi, 2015 .

Suppression of self-excited oscillation for common package of Si-IGBT and SiC-MOS

Toru Masuda, Katsuaki Saito, Yasushi Sasajima, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

120 Study on the Power Generation by Manufacturing the Compuct Windmill

Takashi Suzuki, Katsuaki Saito, Shuya Kamei, 2004 .

Suppression of reverse recovery ringing 3.3kV/450A Si/SiC hybrid in low internal inductance package: Next high power density dual; nHPD2

Masamitsu Inaba, Katsunori Azuma, Katsuaki Saito, 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

Mutsuhiro Mori, Taiga Arai, Katsuaki Saito, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

3 . 3 kV High Speed IGBT Module For Bi-directional and Medium Frequency Application

Katsuaki Saito, Yoshiaki Toyota, Yasushi Toyoda, 2012 .

6-kV, 5.5-kA light-triggered thyristor

Katsuaki Saito, T. Yamaguchi, A. Watanabe, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.