V. Gobronidze

Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications

D. Jishiashvili, Z. Shiolashvili, R. Janelidze, 1996, 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.

AES study of thermally treated GeO/sub 2//(111)GaAs structures

D. Jishiashvili, Z. Shiolashvili, V. Gobronidze, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Germanium Nitride Nanowires Produced by Thermal Annealing in Hydrazine Vapor

V. Gobronidze, D. Jishiashvili, Vassilios Kapaklis, 2009 .