Bin Lu

Tri-Gate Normally-Off GaN Power MISFET

B. Lu, T. Palacios, E. Matioli, 2012, IEEE Electron Device Letters.

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Feng Gao, U. K. Mishra, Di Chen, 2012, IEEE Electron Device Letters.

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Feng Gao, James S. Speck, Carl V. Thompson, 2011 .

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2012 .

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

B. Lu, T. Palacios, O. Saadat, 2010, IEEE Electron Device Letters.

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

Tomas Palacios, Edwin L. Piner, B. Lu, 2010, 68th Device Research Conference.

On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si

Tomas Palacios, Jinwook W. Chung, Bin Lu, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

B. Lu, T. Palacios, E. Piner, 2010, IEEE Electron Device Letters.

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Tomas Palacios, Omair I. Saadat, Edwin L. Piner, 2009, 2009 Device Research Conference.