Jai Verma

发表

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Debdeep Jena, Huili Xing, Satyaki Ganguly, 2011 .

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Debdeep Jena, Vladimir Protasenko, Huili Xing, 2011 .

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Patrick Fay, Debdeep Jena, Yu Cao, 2010 .

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

Debdeep Jena, Shyam Bharadwaj, Vladimir Protasenko, 2017 .

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz

Yu Cao, Patrick Fay, Zongyang Hu, 2012 .

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

Huili Grace Xing, Debdeep Jena, Vladimir Protasenko, 2011 .

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Amit Verma, 2013 .

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Debdeep Jena, P. K. Kandaswamy, Vladimir Protasenko, 2014 .

Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Cheng Liu, 2017 .

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Debdeep Jena, Vladimir Protasenko, Sergei Rouvimov, 2017 .

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

Zongyang Hu, Debdeep Jena, Huili Xing, 2014 .